Single FETs, MOSFETs BSP135L6433HTMA1 product image

BSP135L6433HTMA1

  • Description:MOSFET N-CH 600V 120MA SOT223-4
  • Series:SIPMOS®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)

SKU:42fe3f9d2769 Category: Brand:

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BSP135L6433HTMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 600V 120MA SOT223-4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSP135L6433HTMA1

  • Description:MOSFET N-CH 600V 120MA SOT223-4
  • Series:SIPMOS®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel, Depletion Mode
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:120mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):0V, 10V
  • Rds On (Max) @ Id, Vgs:45Ohm @ 120mA, 10V
  • Vgs(th) (Max) @ Id:1V @ 94µA
  • Gate Charge (Qg) (Max) @ Vgs:4.9 nC @ 5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:146 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):1.8W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-SOT223-4-21
  • Package / Case:TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for BSP135L6433HTMA1

BSP135L6433HTMA1

Single FETs, MOSFETs Overview

The BSP135L6433HTMA1 is an N-channel depletion mode MOSFET from Infineon Technologies, housed in a SOT-223 surface-mount package. It features a maximum drain-source voltage of 600 V and a continuous drain current of 0.12 A at 25°C. The device exhibits a typical gate charge of 3.7 nC at 4.5 V and a maximum on-resistance of 45000 mΩ at 10 V. With a power dissipation rating of 1.8 W and a thermal resistance of 70 K/W, it operates within a temperature range of -55 °C to 150 °C.

Single FETs, MOSFETs Feature Summary

  • Depletion mode operation for normally-on functionality
  • High voltage capability up to 600 V
  • Low gate charge for efficient switching
  • Avalanche rated construction

Single FETs, MOSFETs Applications

  • High-voltage switching circuits
  • Load switch applications
  • Power management systems requiring normally-on behavior

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix L6433HTMA1 against official Infineon documentation to confirm tape-and-reel packaging details. Ensure compatibility with standard SOT-223 footprint requirements during PCB layout. Cross-reference the part number with the latest datasheet revision to validate electrical characteristics and thermal parameters before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a normally-on N-channel MOSFET with high voltage blocking capability is required. The low gate charge supports efficient drive requirements, while the robust thermal performance suits compact designs. Evaluate the high on-resistance against system efficiency needs, as it differs significantly from enhancement-mode counterparts.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's discrete semiconductor portfolio, specifically designed for power switching applications. As a depletion mode device, it serves niche roles where default conduction is necessary. The SOT-223 package provides a balance between power handling and space efficiency for surface-mount assembly processes.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the depletion mode characteristic and 600 V rating. Verify pinout compatibility with the SOT-223 package. Consult official substitution guides for equivalent parts with similar thermal and electrical profiles.

BSP135L6433HTMA1BSP135L6433HTMA1

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