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BSP149 E6906 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 200V 660MA SOT223-4. Review the specifications below when checking this part for your BOM.
The BSP149 E6906 is an N-channel depletion mode SIPMOS small-signal transistor manufactured by Infineon Technologies. It operates in a PG-SOT223 package with a continuous drain current of 0.66 A and a maximum drain-source voltage of 200 V. The device features a maximum on-state resistance of 3.5 Ω at VGS=0 V and is rated for power dissipation up to 1.8 W. It includes dv/dt rating capabilities and is available with gate threshold voltage sorting bands indicated on the reel.
Verify the specific gate threshold voltage band required for the application, as the H6906 suffix indicates sorted availability. Confirm that the PG-SOT223 footprint matches the design layout. Ensure compliance with RoHS and halogen-free requirements if mandated by the end product specifications.
Select this component when a normally-on N-channel configuration is necessary. Consider the thermal resistance characteristics and derating curves for high-temperature environments. Verify that the 200 V breakdown voltage provides sufficient margin for the circuit's peak operating conditions.
This part belongs to the BSP149 series of SIPMOS transistors designed for robust performance in demanding environments. The technology utilizes silicon planar gate structures optimized for low on-resistance and high reliability in automotive and industrial sectors.
BSP149H6327XTSA1: Same electrical parameters but without threshold voltage sorting.
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