Single FETs, MOSFETs BSP149H6327XTSA1 product image

BSP149H6327XTSA1

$1.23
  • Description:MOSFET N-CH 200V 660MA SOT223-4
  • Series:SIPMOS®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:cc9309e4b3d6 Category: Brand:

  
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BSP149H6327XTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 200V 660MA SOT223-4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSP149H6327XTSA1

  • Description:MOSFET N-CH 200V 660MA SOT223-4
  • Series:SIPMOS®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel, Depletion Mode
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):200 V
  • Current - Continuous Drain (Id) @ 25°C:660mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):0V, 10V
  • Rds On (Max) @ Id, Vgs:1.8Ohm @ 660mA, 10V
  • Vgs(th) (Max) @ Id:1V @ 400µA
  • Gate Charge (Qg) (Max) @ Vgs:14 nC @ 5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:430 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):1.8W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-SOT223-4
  • Package / Case:TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for BSP149H6327XTSA1

BSP149H6327XTSA1

Single FETs, MOSFETs Overview

The BSP149H6327XTSA1 is an N-channel depletion mode MOSFET from the SIPMOS series, housed in a PG-SOT223 package. It features a maximum drain-source voltage of 200 V and a continuous drain current of 0.66 A at 25 °C. The device has a maximum on-state resistance of 3.5 Ω at VGS=0 V and operates within a temperature range of -55 °C to 150 °C. It includes dv/dt rating capabilities and meets AEC-Q101 automotive qualification standards.

Single FETs, MOSFETs Feature Summary

  • Depletion mode operation with constant-on behavior at zero gate-source voltage
  • High dv/dt capability rated for fast switching transitions
  • Automotive grade reliability compliant with AEC-Q101 standards
  • Threshold voltage sorting available via reel indicators

Single FETs, MOSFETs Applications

  • Switching applications requiring normally-on characteristics
  • Constant current source implementations
  • Automotive electronic circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific threshold voltage band required for the application, as the H6327 suffix indicates sorted bands printed on the reel label. Confirm that the PG-SOT223 footprint matches the design layout. Ensure thermal management aligns with the specified junction-to-soldering point thermal resistance values under operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a normally-on N-channel switch is necessary. The 200 V breakdown voltage supports high-side or low-side configurations in moderate voltage systems. Consider the negative threshold voltage range (-1 V to -2.1 V) for gate drive compatibility. The SOT-223 package offers a balance between power handling and compact surface-mount integration.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's SIPMOS small-signal transistor family, designed for robust performance in demanding environments. The depletion mode variant distinguishes it from standard enhancement-mode MOSFETs by conducting current at zero gate bias. It serves niche roles in analog switching and specialized power control topologies where default conduction is required.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the N-channel depletion mode characteristic and 200 V rating. Verify pinout compatibility with PG-SOT223. Check if alternative parts offer similar dv/dt ratings and AEC-Q101 certification for automotive use. No other specific replacement part numbers are confirmed in public documentation.

BSP149H6327XTSA1BSP149H6327XTSA1
$1.23
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