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BSP170IATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is BSP170IATMA1. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP170IATMA1
- Description：BSP170IATMA1
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Single FETs, MOSFETs datasheet and documents for BSP170IATMA1
Single FETs, MOSFETs Overview
The BSP170IATMA1 is a P-channel small signal MOSFET manufactured by Infineon Technologies. It features a drain-source breakdown voltage of 60 V and supports a continuous drain current of 3.2 A. The device exhibits a maximum on-resistance of 260 mOhms at a gate-source voltage of 10 V, with a threshold voltage range between -2.1 V and -4 V. Gate charge is specified at 10.8 nC, while power dissipation reaches 5 W. Operating temperatures span from -55 °C to +150 °C, with switching times including a rise time of 2.4 ns and fall time of 11 ns.
Single FETs, MOSFETs Feature Summary
- Single-channel enhancement mode P-Channel configuration
- Integrated thermal protection for high reliability
- Lead-free packaging compliant with RoHS standards
Single FETs, MOSFETs Applications
- Load switching applications
- Power management circuits
- General purpose amplification
Single FETs, MOSFETs Procurement Notes
Verify the complete ordering code matches the specific suffix requirements for tape and reel quantities. Confirm package type alignment with PCB footprint designs. Ensure temperature ratings meet operational environmental constraints. Cross-reference datasheet revisions for updated electrical characteristics before finalizing procurement specifications.
Single FETs, MOSFETs Selection Notes
Select this component for low-side or high-side switching where moderate current handling is required. Evaluate thermal resistance values against expected power dissipation levels. Compare gate charge parameters against driver capabilities to ensure adequate switching speeds. Verify compatibility with system logic voltage levels for proper threshold activation.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's OptiMOS technology family, designed for efficient power control in compact form factors. The SMD/SMT installation style facilitates automated assembly processes. It serves as a fundamental building block for discrete transistor stages within broader electronic systems requiring reliable semiconductor switching.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution guides for compatible P-channel MOSFETs with matching voltage and current ratings. Verify pinout compatibility to prevent circuit board modifications. Assess thermal performance equivalence to maintain system reliability under identical operating conditions.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
