BSP170P

Single FETs, MOSFETs Overview

The BSP170P is a -60V P-Channel Enhancement Mode MOSFET in an SOT-223 package. It features a maximum continuous drain current of -1.9A and a pulsed drain current of -7.6A at 25°C. The on-state resistance (RDS(on)) is typically 239mΩ, with a maximum of 300mΩ at VGS=-10V. Key dynamic parameters include input capacitance (Ciss) of 328pF and total gate charge (Qg) of -10nC. The device supports avalanche energy ratings and reverse diode dv/dt capabilities, operating within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

• Enhancement mode operation for efficient switching control
• Rated for single-pulse avalanche energy conditions
• High dv/dt capability for the integrated reverse diode
• Lead-free plating compliant with RoHS standards

Single FETs, MOSFETs Applications

• Low-side load switching applications
• Power management circuits requiring small signal handling
• General purpose amplification stages

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code against the manufacturer's official documentation to ensure correct package type and delivery mode. Confirm that the component meets required environmental compliance standards such as RoHS. Check datasheet thermal characteristics for proper PCB footprint design to maintain safe operating temperatures under specified load conditions.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a -60V P-Channel MOSFET with moderate current handling capabilities. Consider the thermal resistance values when designing heat dissipation strategies. Ensure the gate drive voltage aligns with the threshold specifications for optimal RDS(on) performance. Evaluate the avalanche rating if the application involves inductive load switching.

Single FETs, MOSFETs Part Context

This component belongs to the family of small power P-Channel MOSFETs designed for general-purpose switching and amplification. It utilizes enhancement mode technology to provide reliable performance in low-voltage digital and analog circuits. The SOT-223 package offers a compact solution for surface-mount assembly while maintaining adequate thermal properties for its power rating.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other -60V P-Channel MOSFETs in the SOT-223 package. Verify pinout compatibility and electrical parameter equivalence, specifically RDS(on), ID, and VGS(th). Ensure any substitute part meets the same avalanche and dv/dt ratings if these features are critical to the circuit design.