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BSP170PH6327XTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 60V 1.9A SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP170PH6327XTSA1
- Description：MOSFET P-CH 60V 1.9A SOT223-4
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：1.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：300mOhm @ 1.9A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：410 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP170PH6327XTSA1
Single FETs, MOSFETs Overview
The BSP170PH6327XTSA1 is a P-channel enhancement-mode MOSFET from the Infineon SIPMOS series, housed in a PG-SOT-223 package. It features a maximum drain-source voltage of -60 V and a continuous drain current of -1.9 A at 25 °C. The device has a maximum on-state resistance of 0.3 Ω and is rated for avalanche energy operation. It operates within a temperature range of -55 °C to 150 °C and complies with AEC-Q101 standards.
Single FETs, MOSFETs Feature Summary
- Avalanche rated for robust transient performance
- dv/dt rated for high-speed switching applications
- Pb-free lead plating and RoHS compliant construction
Single FETs, MOSFETs Applications
- Low-side power switching
- Load control circuits
- General-purpose amplification
Single FETs, MOSFETs Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm that the ordering suffix matches the required tape and reel specifications. Ensure compliance with automotive qualification standards if deployed in vehicle electronics. Validate thermal management requirements against the specified junction-to-soldering point resistance.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring a P-channel switch with -60 V breakdown capability. Consider the -1.9 A continuous current rating for load handling. Evaluate the 0.3 Ω maximum on-resistance for conduction loss calculations. Verify compatibility with the PG-SOT-223 footprint during PCB layout.
Single FETs, MOSFETs Part Context
This part belongs to the Infineon SIPMOS small-signal transistor family. It utilizes silicon planar technology optimized for surface-mount assembly. The device is designed for general-purpose switching and amplification tasks in electronic circuits.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include BSP170P variants with identical electrical ratings and package dimensions. Cross-reference specific ordering suffixes to ensure matching packaging configurations.
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