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BSP171IATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is BSP171IATMA1. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP171IATMA1
- Description：BSP171IATMA1
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Single FETs, MOSFETs datasheet and documents for BSP171IATMA1
Single FETs, MOSFETs Overview
The BSP171IATMA1 is a P-channel enhancement mode MOSFET from Infineon Technologies, utilizing silicon technology. It features a drain-source breakdown voltage of 60 V and supports a continuous drain current of 3.2 A. The device exhibits a maximum on-resistance of 250 mOhms at specified gate-source voltages. Key electrical parameters include a gate-source threshold voltage range starting at 2 V, a total gate charge of 6.7 nC, and a power dissipation capacity of 5 W. Operating temperatures span from -55 C to +150 C, with switching characteristics defined by a typical turn-off delay of 24 ns.
Single FETs, MOSFETs Feature Summary
- P-channel enhancement mode architecture for logic-level control applications
- Avalanche rated capability for robustness against inductive load switching events
- Silicon-based construction optimized for small-signal power management
Single FETs, MOSFETs Applications
- Small signal power switching circuits
- Logic level interface drivers
- Inductive load protection stages
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix IATMA1 against the official Infineon datasheet to confirm package type and tape-and-reel specifications. Ensure the component matches the required P-channel configuration and voltage ratings for the target circuit design before procurement.
Single FETs, MOSFETs Selection Notes
Select this component when a P-channel MOSFET with 60 V rating and low on-resistance is required. Consider the 3.2 A current capability and thermal performance within the SMD/SMT package constraints. Verify compatibility with the system's gate drive voltage levels relative to the threshold specifications.
Single FETs, MOSFETs Part Context
This part belongs to the Infineon SIPMOS small-signal transistor family. It represents a silicon-based metal-oxide semiconductor field-effect transistor designed for general-purpose switching applications. The product line emphasizes reliability and efficiency in compact surface-mount configurations.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains identical P-channel polarity, voltage ratings, and package dimensions to guarantee mechanical and electrical compatibility.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
