Single FETs, MOSFETs BSP171PH6327XTSA1 product image

BSP171PH6327XTSA1

$0.94
  • Description:MOSFET P-CH 60V 1.9A SOT223-4
  • Series:SIPMOS®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:7bb2fcb3f0de Category: Brand:

  
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BSP171PH6327XTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 60V 1.9A SOT223-4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSP171PH6327XTSA1

  • Description:MOSFET P-CH 60V 1.9A SOT223-4
  • Series:SIPMOS®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:1.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:300mOhm @ 1.9A, 10V
  • Vgs(th) (Max) @ Id:2V @ 460µA
  • Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:460 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):1.8W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-SOT223-4
  • Package / Case:TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for BSP171PH6327XTSA1

BSP171PH6327XTSA1

Single FETs, MOSFETs Overview

The BSP171PH6327XTSA1 is a P-Channel SIPMOS® small-signal transistor in PG-SOT223 packaging. It features a drain-source breakdown voltage of -60 V and continuous drain current of -1.9 A at 25 °C. The maximum on-state resistance is 0.3 Ω at VGS=-10 V. Gate threshold voltage ranges from -1 to -2 V. Power dissipation is 1.8 W at 25 °C. Operating temperature spans -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

  • Avalanche rated for robust operation under transient conditions
  • Logic level compatible for direct interface with standard logic circuits
  • dv/dt rated to handle fast switching transitions
  • Qualified according to AEC-Q101 automotive standards

Single FETs, MOSFETs Applications

  • Load switching applications
  • Power management circuits
  • Automotive electronics systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix H6327 corresponds to the required tape and reel quantity of 1000 pieces per reel. Confirm that the component meets RoHS compliance and halogen-free requirements as specified in the datasheet. Ensure the package type matches the PG-SOT223 footprint for PCB integration.

Single FETs, MOSFETs Selection Notes

Select this component when a P-Channel MOSFET with 60 V rating and 1.9 A continuous current capability is required. Consider its avalanche rating and dv/dt characteristics for high-stress environments. Verify thermal resistance values against the specific cooling area and ambient temperature conditions of the target application design.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's SIPMOS® small-signal transistor family. It utilizes silicon technology and is designed for surface mount installation. The device integrates a single P-Channel enhancement mode transistor within a compact PG-SOT223 package, suitable for space-constrained electronic designs.

Single FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

BSP171PH6327XTSA1BSP171PH6327XTSA1
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