SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
BSP171PH6327XTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 60V 1.9A SOT223-4. Review the specifications below when checking this part for your BOM.
The BSP171PH6327XTSA1 is a P-Channel SIPMOS® small-signal transistor in PG-SOT223 packaging. It features a drain-source breakdown voltage of -60 V and continuous drain current of -1.9 A at 25 °C. The maximum on-state resistance is 0.3 Ω at VGS=-10 V. Gate threshold voltage ranges from -1 to -2 V. Power dissipation is 1.8 W at 25 °C. Operating temperature spans -55 °C to +150 °C.
Verify the specific ordering suffix H6327 corresponds to the required tape and reel quantity of 1000 pieces per reel. Confirm that the component meets RoHS compliance and halogen-free requirements as specified in the datasheet. Ensure the package type matches the PG-SOT223 footprint for PCB integration.
Select this component when a P-Channel MOSFET with 60 V rating and 1.9 A continuous current capability is required. Consider its avalanche rating and dv/dt characteristics for high-stress environments. Verify thermal resistance values against the specific cooling area and ambient temperature conditions of the target application design.
This part belongs to Infineon's SIPMOS® small-signal transistor family. It utilizes silicon technology and is designed for surface mount installation. The device integrates a single P-Channel enhancement mode transistor within a compact PG-SOT223 package, suitable for space-constrained electronic designs.
No public confirmed substitute part numbers are available in the provided documentation.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.