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BSP296L6433HTMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 1.1A SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP296L6433HTMA1
- Description：MOSFET N-CH 100V 1.1A SOT223-4
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：1.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：700mOhm @ 1.1A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 400µA
- Gate Charge (Qg) (Max) @ Vgs：17.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：364 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.79W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP296L6433HTMA1
Single FETs, MOSFETs Overview
The BSP296L6433HTMA1 is a small-signal N-channel enhancement mode MOSFET manufactured by Infineon Technologies. It utilizes SIPMOS technology and features logic-level gate drive characteristics with a threshold voltage range of 0.8 to 2.0 V. The device is housed in an SOT-223 package and supports a drain-source voltage of 100 V, a continuous drain current of 1 A at 42 °C, and a power dissipation of 1.8 W at 25 °C. The maximum junction temperature rating extends up to +150 °C.
Single FETs, MOSFETs Feature Summary
- Logic level operation for direct interface with standard digital logic circuits
- SIPMOS technology providing robust performance in small-signal applications
- High thermal stability supporting operation up to 150 °C junction temperature
Single FETs, MOSFETs Applications
- Low-side switching in automotive electronics
- General-purpose signal switching
- Power management circuits requiring logic-level control
Single FETs, MOSFETs Procurement Notes
Verify the component status before integration, as availability may vary. Confirm that the specific ordering code matches the required tape and reel packaging specifications. Ensure design compliance with the absolute maximum ratings provided in the official datasheet to prevent device failure during operation.
Single FETs, MOSFETs Selection Notes
Select this component when a single N-channel MOSFET with logic-level input compatibility is required. The 100 V breakdown voltage and 1 A current capacity suit low-power switching tasks. Consider the SOT-223 package dimensions and thermal resistance values for appropriate heat sinking strategies in the final assembly.
Single FETs, MOSFETs Part Context
This part belongs to the BSP296 series of SIPMOS small-signal transistors from Infineon Technologies. The series is designed for general-purpose switching applications where compact size and reliable logic-level performance are prioritized over high-current handling capabilities.
Single FETs, MOSFETs Replacement Considerations
Consult official replacement lists or cross-reference guides for verified substitutes. Ensure any alternative component matches the pinout configuration, voltage ratings, and package type to maintain circuit integrity.
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