BSP297 E6327

Single FETs, MOSFETs Overview

The BSP297 E6327 is an N-channel enhancement-mode MOSFET from Infineon's SIPMOS series, housed in a surface-mount SOT-223 package with four pins. It features a maximum drain-source voltage of 200 V and a continuous drain current of 660 mA at 25°C. The device has a typical on-resistance of 1.8 Ω and a gate charge of 12.9 nC at 10 V. It operates within a temperature range of -55°C to 150°C and dissipates up to 1.8 W of power. The component meets AEC-Q101 automotive standards.

Single FETs, MOSFETs Feature Summary

• N-channel enhancement mode construction for efficient switching control
• Automotive qualification compliant with AEC-Q101 standards
• SOT-223 surface mount packaging for compact circuit integration

Single FETs, MOSFETs Applications

• Small signal amplification circuits
• Low-power switching applications
• General purpose electronic devices requiring small power MOSFETs

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix E6327 against official Infineon documentation to confirm tape-and-reel specifications. Ensure compatibility with existing PCB footprints for the SOT-223 package. Confirm that the AEC-Q101 qualification aligns with target application requirements. Check for any recent lifecycle notices regarding availability or obsolescence status directly from the manufacturer.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a 200 V breakdown voltage with moderate current handling capabilities. The low gate charge facilitates efficient drive requirements in switching scenarios. Consider the thermal performance limits defined by the 1.8 W dissipation rating when designing heat management solutions. Verify that the 1.8 Ω on-resistance meets the efficiency targets for the intended load conditions.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's SIPMOS family, designed for small-signal and small-power applications. The SIPMOS technology integrates optimized cell structures to balance conduction losses and switching speeds. The BSP297 variant specifically targets cost-sensitive designs where standard discrete MOSFET performance is sufficient without the complexity of high-power variants.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon cross-reference guides for verified substitutes. Ensure replacement parts match the 200 V rating, SOT-223 package, and N-channel enhancement configuration. Verify equivalent electrical parameters such as Rds(on) and Qg to maintain circuit performance integrity.