BSP297H6327XTSA1

$0.80

Description：MOSFET N-CH 200V 660MA SOT223-4
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2095a58d9970 Category: Single FETs, MOSFETs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

BSP297H6327XTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 200V 660MA SOT223-4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSP297H6327XTSA1

Description：MOSFET N-CH 200V 660MA SOT223-4
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：660mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1.8Ohm @ 660mA, 10V
Vgs(th) (Max) @ Id：1.8V @ 400µA
Gate Charge (Qg) (Max) @ Vgs：16.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：357 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.8W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT223-4
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for BSP297H6327XTSA1

BSP297H6327XTSA1

Single FETs, MOSFETs Overview

The BSP297H6327XTSA1 is an N-channel enhancement mode MOSFET from Infineon's SIPMOS series, housed in a PG-SOT223-4 surface-mount package. It features a maximum drain-source voltage of 200 V and a continuous drain current of 0.66 A at 25°C. The device exhibits a typical gate charge of 12.9 nC and a maximum on-state resistance of 1.8 Ω at VGS=10V. Qualified under AEC-Q101, it operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Logic level operation for direct interface with standard digital control circuits
High dv/dt rating capability for robust performance in switching applications
Automotive qualification ensuring reliability in demanding environments

Single FETs, MOSFETs Applications

Small-signal switching circuits
Automotive electronic modules
General-purpose low-power amplification

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix H6327XTSA1 against official Infineon documentation to confirm tape and reel packaging quantities and lead times. Ensure compatibility with RoHS and halogen-free requirements as specified in the datasheet before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 200 V breakdown voltage and small-signal current handling are required in a compact SOT-223 footprint. Consider the thermal resistance characteristics and power dissipation limits relative to the intended ambient operating conditions and PCB copper area availability.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's SIPMOS small-signal transistor family, designed for efficient switching in space-constrained designs. The PG-SOT223 package provides a balance between thermal performance and board space efficiency, suitable for various consumer and industrial electronics.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon cross-reference lists for verified substitutes. Do not assume pin-compatible alternatives without verifying electrical parameters and package dimensions against the original specification.