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BSP297L6327HTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 200V 660MA SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP297L6327HTSA1
- Description：MOSFET N-CH 200V 660MA SOT223-4
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：660mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.8Ohm @ 660mA, 10V
- Vgs(th) (Max) @ Id：1.8V @ 400µA
- Gate Charge (Qg) (Max) @ Vgs：16.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：357 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4-21
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP297L6327HTSA1
Single FETs, MOSFETs Overview
The BSP297L6327HTSA1 is an N-channel enhancement-mode MOSFET from Infineon's SIPMOS series, housed in a surface-mount SOT-223 package with four pins. It features a maximum drain-source voltage of 200 V and a continuous drain current of 660 mA at 25°C. The device has a typical on-resistance of 1.8 Ω and a gate charge of 12.9 nC at 10 V. It operates within a temperature range of -55°C to 150°C and dissipates up to 1.8 W of power.
Single FETs, MOSFETs Feature Summary
- N-channel enhancement mode construction for efficient switching
- High breakdown voltage capability suitable for robust circuit protection
- Automotive qualification ensuring reliability under demanding conditions
Single FETs, MOSFETs Applications
- Automotive load switching applications
- General-purpose small signal switching
- Protection circuits requiring high voltage tolerance
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix L6327 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure the component meets AEC-Q101 standards if required for automotive integration. Cross-reference the full part number with manufacturer databases to validate availability and lifecycle status before finalizing procurement plans.
Single FETs, MOSFETs Selection Notes
Select this component when a 200 V rating is necessary for small-signal applications. The SOT-223 package provides adequate thermal performance for low-power dissipation scenarios. Consider the 1.8 Ω on-resistance for efficiency calculations in low-current switching environments where higher voltages are present.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's SIPMOS family, designed for small power applications. It complements other OptiMOS devices by offering higher voltage ratings in compact surface-mount packages. The series supports various industrial and automotive needs requiring reliable N-channel switching capabilities.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution guides for equivalent N-channel MOSFETs with matching 200 V ratings and SOT-223 footprints. Verify pinout compatibility and thermal characteristics before replacing.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
