BSP298 E6327

Description：MOSFET N-CH 400V 500MA SOT223-4
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:510ff88dc54c Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSP298 E6327 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 400V 500MA SOT223-4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSP298 E6327

Description：MOSFET N-CH 400V 500MA SOT223-4
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：400 V
Current - Continuous Drain (Id) @ 25°C：500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：400 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.8W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT223-4
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for BSP298 E6327

BSP298 E6327

Single FETs, MOSFETs Overview

The BSP298 E6327 is an N-channel enhancement mode SIPMOS small-signal transistor rated for a maximum drain-source voltage of 400 V and a continuous drain current of 0.5 A at 26 °C. It features a maximum on-state resistance of 3 Ω at VGS = 10 V and ID = 0.5 A, with a gate threshold voltage range of 2.1 to 4.0 V. The device supports a pulsed DC drain current of 2 A and offers avalanche energy capability of 130 mJ under specified conditions. Power dissipation reaches 1.8 W at 25 °C, with an operating temperature range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Enhancement mode operation with low gate threshold voltage for efficient drive compatibility
Avalanche-rated construction supporting single-pulse energy absorption capabilities
Surface-mount PG-SOT223 package design optimized for thermal performance

Single FETs, MOSFETs Applications

High-voltage switching circuits requiring robust avalanche tolerance
Low-side power control applications in automotive or industrial systems
General-purpose amplification and switching tasks within safe operating limits

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm the specific ordering suffix matches required packaging configurations. Ensure compliance with RoHS directives and AEC-Q101 qualification standards relevant to your application environment before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when high breakdown voltage and moderate current handling are required in a compact surface-mount form factor. Consider the thermal resistance characteristics and safe operating area constraints for your specific duty cycle requirements. Evaluate gate drive voltage levels against the threshold specifications to ensure reliable turn-on performance across the intended temperature range.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's SIPMOS family of small-signal transistors, designed for general-purpose switching and amplification. The SIPMOS technology integrates planar gate structures with vertical current flow to achieve low on-resistance and high reliability. This specific model targets applications needing robust performance in harsh environments while maintaining compact board space utilization.