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BSP298H6327XUSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 400V 500MA SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP298H6327XUSA1
- Description：MOSFET N-CH 400V 500MA SOT223-4
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：400 V
- Current - Continuous Drain (Id) @ 25°C：500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：400 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP298H6327XUSA1
Single FETs, MOSFETs Overview
The Infineon Technologies BSP298H6327XUSA1 is a single N-channel MOSFET manufactured using silicon technology. It features a 400V drain-source breakdown voltage and supports a continuous drain current of 500mA. The device utilizes an enhancement mode channel configuration within a SOT-223-4 surface-mount package. Key electrical characteristics include a maximum gate-source voltage of 20V, a typical on-resistance of 4 Ohms, and a gate charge of 6.8nC. It operates reliably across a temperature range from -55°C to +150°C with a power dissipation rating of 1.8W.
Single FETs, MOSFETs Feature Summary
- Designed for moderate-power switching applications requiring high voltage tolerance
- Single N-channel enhancement mode configuration for efficient control
- Automotive qualified under AEC-Q101 standards for reliability
Single FETs, MOSFETs Applications
- Moderate-power switching circuits
- Automotive electronic systems
- General purpose transistor applications
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix XUSA1 against official Infineon documentation to confirm exact tape-and-reel specifications and regional compliance details. Ensure the ordering part number matches the required packaging format before finalizing procurement. Cross-reference the manufacturer's latest datasheet to confirm active status and any potential lifecycle changes.
Single FETs, MOSFETs Selection Notes
Select this component when a robust N-channel MOSFET with 400V blocking capability is required in a compact SOT-223 package. Consider its 500mA current rating and 4 Ohm on-resistance for low-to-moderate power loads. Verify that the thermal management solution accommodates the 1.8W dissipation limit within the intended operating environment.
Single FETs, MOSFETs Part Context
This part belongs to the BSP series of N-channel MOSFETs from Infineon Technologies. These devices are engineered for general-purpose switching tasks. The BSP298 variant specifically targets applications needing higher voltage ratings compared to lower-voltage counterparts in the same family, while maintaining compatibility with standard surface-mount assembly processes.
Single FETs, MOSFETs Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Infineon cross-reference tools or authorized distributors for verified alternatives.
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