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BSP299 E6327 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 500V 400MA SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP299 E6327
- Description：MOSFET N-CH 500V 400MA SOT223-4
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：400mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：4Ohm @ 400mA, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：400 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4-21
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP299 E6327
Single FETs, MOSFETs Overview
The BSP299 E6327 is an N-channel enhancement mode SIPMOS small-signal transistor from Infineon Technologies, housed in a surface-mount SOT-223 package. It features a maximum drain-source voltage of 500 V and a continuous drain current of 0.4 A at 25 °C. The device has a typical on-state resistance of 3.1 Ω and a gate threshold voltage range of 2.1 to 4.0 V. It supports a single-pulse avalanche energy of 130 mJ and operates within a junction temperature range of -55 °C to +150 °C.
Single FETs, MOSFETs Feature Summary
- Avalanche rated for robustness against transient energy events
- High breakdown voltage capability suitable for demanding switching applications
- Low gate threshold voltage enabling efficient drive compatibility
Single FETs, MOSFETs Applications
- General-purpose high-voltage switching circuits
- Power management modules requiring compact form factors
- Automotive electronic systems compliant with AEC-Q101 standards
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix matches the required tape and reel configuration. Confirm that the component meets RoHS compliance requirements and holds the necessary AEC-Q101 qualification status for your intended deployment environment before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component when a high-voltage N-channel MOSFET with moderate current handling is required in a compact surface-mount footprint. Ensure the application circuit accounts for the thermal resistance characteristics and power dissipation limits under expected operating conditions.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's SIPMOS series of small-signal transistors. The series is designed to provide reliable performance in various electronic applications while maintaining a small physical profile. The BSP299 specifically targets scenarios needing high voltage isolation with standard logic-level drive capabilities.
Single FETs, MOSFETs Replacement Considerations
Consult official manufacturer documentation for confirmed substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without verifying electrical parameters and pin configurations.
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