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BSP300L6327HUSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 800V 190MA SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP300L6327HUSA1
- Description：MOSFET N-CH 800V 190MA SOT223-4
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：800 V
- Current - Continuous Drain (Id) @ 25°C：190mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：20Ohm @ 190mA, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：230 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4-21
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP300L6327HUSA1
Single FETs, MOSFETs Overview
The BSP300L6327HUSA1 is an N-channel enhancement mode SIPMOS small-signal transistor manufactured by Infineon Technologies. It features a drain-source breakdown voltage of 800 V and a continuous drain current of 0.19 A at 25 °C. The device has a maximum gate-source voltage of ±20 V and power dissipation of 1.8 W. It operates within a junction temperature range of -55 °C to +150 °C. The component is avalanche rated, RoHS compliant, and qualified according to AEC-Q101 standards.
Single FETs, MOSFETs Feature Summary
- Avalanche rated for robust operation under inductive load switching conditions
- High voltage capability with 800 V drain-source breakdown voltage
- Qualified for automotive applications per AEC-Q101 standard
Single FETs, MOSFETs Applications
- High-voltage switching circuits
- Automotive electronic systems
- Inductive load driving applications
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix L6327HUSA1 against official Infineon documentation to confirm packaging details and compliance status. Ensure compatibility with required thermal management solutions given the 1.8 W power dissipation limit. Confirm availability through authorized distributors as supply status may vary.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring high voltage isolation in a compact SOT-223 package. Consider the 20 Ω on-resistance when calculating conduction losses at the target operating current. Verify that the gate threshold voltage range aligns with the available drive voltage levels in the system architecture.
Single FETs, MOSFETs Part Context
This part belongs to the BSP300 series of SIPMOS transistors designed for small-signal applications. It utilizes silicon technology and is housed in a PG-SOT223-4 package. The series is characterized by high breakdown voltages suitable for demanding power electronics environments.
Single FETs, MOSFETs Replacement Considerations
Check for direct substitutes within the BSP300 family or other Infineon high-voltage MOSFETs with matching pinouts and electrical ratings. Ensure any replacement maintains the same package type and thermal characteristics.
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