BSP315PE6327T

Single FETs, MOSFETs Overview

The BSP315PE6327T is a P-Channel SIPMOS small-signal transistor manufactured by Infineon Technologies. It features an enhancement mode logic-level design with avalanche and dv/dt ratings. The device operates in a SOT-223 package with Pin 1 as Gate, Pin 2/4 as Drain, and Pin 3 as Source. Key electrical parameters include a drain-source voltage of -60 V, continuous drain current of -1.17 A at 25 °C, and pulsed drain current of -4.68 A. The on-state resistance is typically 0.8 Ω at VGS = -10 V. Power dissipation reaches 1.8 W at 25 °C ambient temperature.

Single FETs, MOSFETs Feature Summary

• P-Channel enhancement mode construction
• Logic level gate drive capability
• Avalanche energy rated for robustness
• dv/dt rated for high-speed switching

Single FETs, MOSFETs Applications

• High-side load switching
• Power management circuits
• Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code Q67042-S4004 against the datasheet to ensure correct component identification. Confirm that the suffix PE6327T corresponds to the intended packaging configuration. Cross-reference the manufacturer's latest documentation to validate any updates to thermal or electrical characteristics prior to final procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a P-Channel MOSFET with logic-level compatibility. Ensure the operating voltage does not exceed the -60 V drain-source breakdown rating. Consider the thermal resistance values when designing heat dissipation strategies, particularly for continuous operation near the maximum power dissipation limit of 1.8 W.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's SIPMOS small-signal transistor family. It utilizes silicon technology within a surface-mount SOT-223 package. The device is designed for general-purpose switching applications where compact size and reliable performance are required. It represents a standard offering for low-power P-Channel switching needs.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes such as BSP315P from other manufacturers if supply constraints exist. Verify pinout compatibility and electrical parameter equivalence before substitution.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current?

The maximum pulsed drain current is -4.68 A at an ambient temperature of 25 °C.

How is the device packaged?

The BSP315PE6327T is housed in a SOT-223 package with four pins.