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BSP315PH6327XTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 60V 1.17A SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP315PH6327XTSA1
- Description：MOSFET P-CH 60V 1.17A SOT223-4
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：1.17A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：800mOhm @ 1.17A, 10V
- Vgs(th) (Max) @ Id：2V @ 160µA
- Gate Charge (Qg) (Max) @ Vgs：7.8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：160 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP315PH6327XTSA1
Single FETs, MOSFETs Overview
The BSP315PH6327XTSA1 is a P-Channel SIPMOS small-signal transistor in the PG-SOT223 package. It features a drain-source voltage of -60 V, continuous drain current of -1.17 A at 25 °C, and pulsed drain current of -4.68 A. The on-state resistance is typically 0.8 Ω at VGS = -10 V. Power dissipation reaches 1.8 W at 25 °C. Operating temperature ranges from -55 °C to +150 °C. It includes avalanche energy ratings (EAS: 24 mJ) and dv/dt capability.
Single FETs, MOSFETs Feature Summary
- Enhancement mode logic level operation for direct interface with standard logic circuits
- Avalanche rated design supporting single pulse energy absorption up to 24 mJ
- dv/dt rated reverse diode performance for high-speed switching applications
Single FETs, MOSFETs Applications
- Logic level power switching
- High frequency switching circuits
- Compact design implementations requiring robust transient handling
Single FETs, MOSFETs Procurement Notes
Verify component authenticity by checking markings against official Infineon specifications. Confirm package type matches PG-SOT223 and ordering suffix H6327 corresponds to tape and reel packaging. Ensure compliance with AEC-Q101 automotive qualification requirements if applicable to your specific system environment.
Single FETs, MOSFETs Selection Notes
Select this component when a P-Channel MOSFET with low gate threshold voltage is required for logic interfacing. Consider its thermal characteristics and safe operating area limits under varying ambient temperatures. Evaluate the trade-off between on-resistance and switching speed based on circuit demands.
Single FETs, MOSFETs Part Context
This device belongs to Infineon's SIPMOS family of small-signal transistors. It utilizes silicon technology optimized for surface mount applications. The part integrates robust construction suitable for demanding electronic environments while maintaining compact physical dimensions.
Single FETs, MOSFETs Replacement Considerations
BSP315P-E6327
Single FETs, MOSFETs FAQ
What is the maximum avalanche energy rating?
The single pulse avalanche energy (EAS) is rated at 24 mJ under conditions of ID = -1.17 A, VDD = -25 V, and RGS = 25 Ω.
Is the device qualified for automotive applications?
Yes, the BSP315P is qualified according to the AEC-Q101 standard.
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