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BSP315PL6327HTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 60V 1.17A SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP315PL6327HTSA1
- Description：MOSFET P-CH 60V 1.17A SOT223-4
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：1.17A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：800mOhm @ 1.17A, 10V
- Vgs(th) (Max) @ Id：2V @ 160µA
- Gate Charge (Qg) (Max) @ Vgs：7.8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：160 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4-21
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP315PL6327HTSA1
Single FETs, MOSFETs Overview
The BSP315PL6327HTSA1 is a P-Channel SIPMOS small-signal transistor in an SOT-223 package. It features a drain-source voltage of -60 V, continuous drain current of -1.17 A at 25 °C, and on-state resistance of 0.8 Ω at VGS = -10 V. The device supports pulsed drain currents up to -4.68 A, offers avalanche energy ratings of 24 mJ, and operates within a temperature range of -55 °C to +150 °C.
Single FETs, MOSFETs Feature Summary
- P-Channel enhancement mode MOSFET with logic level gate drive capability
- Rated for single-pulse avalanche energy operation
- High dv/dt reverse diode rating for robust switching performance
Single FETs, MOSFETs Applications
- Logic-level power switching applications
- Low-side or high-side load control circuits
- General-purpose power management modules
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix L6327 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure the component matches the required SOT-223 footprint and pinout configuration before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring a compact P-Channel solution with defined avalanche ruggedness. Evaluate thermal constraints carefully as power dissipation decreases significantly above ambient temperatures. Confirm that the gate threshold voltage aligns with the available control logic levels.
Single FETs, MOSFETs Part Context
This part belongs to the BSP315 family of SIPMOS transistors designed for small-signal power applications. The series provides a balance of low on-resistance and high breakdown voltage in surface-mount packages suitable for automated assembly processes.
Single FETs, MOSFETs Replacement Considerations
BSP315PH6327XTSA1
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