BSP316PE6327

$0.26

Description：MOSFET P-CH 100V 680MA SOT223-4
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:ff8ae0b56f5d Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSP316PE6327 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 100V 680MA SOT223-4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSP316PE6327

Description：MOSFET P-CH 100V 680MA SOT223-4
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：680mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1.8Ohm @ 680mA, 10V
Vgs(th) (Max) @ Id：2V @ 170µA
Gate Charge (Qg) (Max) @ Vgs：6.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：146 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.8W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT223-4
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for BSP316PE6327

BSP316PE6327

Single FETs, MOSFETs Overview

The BSP316PE6327 is a P-Channel SIPMOS small-signal transistor manufactured by Infineon Technologies. It features a -100 V drain-source breakdown voltage and a continuous drain current of -0.68 A at 25°C. The device exhibits a maximum on-state resistance of 1.8 Ω at VGS = -10 V. It operates within a temperature range of -55°C to +150°C and utilizes a P-SOT223-4-1 package.

Single FETs, MOSFETs Feature Summary

P-Channel enhancement mode logic level operation
High dv/dt rated capability for fast switching applications
Integrated reverse diode with defined recovery characteristics

Single FETs, MOSFETs Applications

Power management circuits requiring high-side switching
Motor control driver stages
General-purpose low-power amplification

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code Q67042-S4165 against official Infineon documentation to ensure correct tape and reel configuration. Confirm that the component meets all required thermal and electrical specifications for the intended operating environment before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a P-Channel MOSFET with a -100 V rating and compact SOT223 packaging is required. Consider the 1.8 Ω on-resistance and 1.8 W power dissipation limits relative to the expected load current and ambient temperature conditions during design.

Single FETs, MOSFETs Part Context

This part belongs to the BSP316 series of SIPMOS small-signal transistors. It is designed for general-purpose switching and amplification tasks, offering a balance between voltage handling and current capacity in a surface-mount package suitable for automated assembly processes.