Single FETs, MOSFETs BSP316PE6327T product image

BSP316PE6327T

$0.26
  • Description:MOSFET P-CH 100V 680MA SOT223-4
  • Series:SIPMOS®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)

SKU:3d46fffcfb61 Category: Brand:

  
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BSP316PE6327T is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 100V 680MA SOT223-4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSP316PE6327T

  • Description:MOSFET P-CH 100V 680MA SOT223-4
  • Series:SIPMOS®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:680mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:1.8Ohm @ 680mA, 10V
  • Vgs(th) (Max) @ Id:2V @ 170µA
  • Gate Charge (Qg) (Max) @ Vgs:6.4 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:146 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):1.8W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-SOT223-4
  • Package / Case:TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for BSP316PE6327T

BSP316PE6327T

Single FETs, MOSFETs Overview

The BSP316PE6327T is a P-Channel SIPMOS small-signal transistor manufactured by Infineon Technologies. It features a -100 V drain-source breakdown voltage and supports a continuous drain current of -0.68 A at 25°C. The device exhibits a maximum on-state resistance of 1.8 Ω at VGS = -10 V. It operates within an ambient temperature range of -55°C to +150°C and dissipates up to 1.8 W of power. The component utilizes a P-SOT223-4-1 package with logic-level gate drive capability.

Single FETs, MOSFETs Feature Summary

  • Enhancement mode operation with logic level gate drive compatibility
  • High reverse diode dv/dt rating for robust switching performance
  • Single-channel P-Channel configuration in a surface-mount package

Single FETs, MOSFETs Applications

  • Low-side load switching applications
  • Power management circuits requiring high dv/dt tolerance
  • General-purpose signal switching in automotive environments

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code Q67042-S4165 against the datasheet to ensure correct tape and reel specifications. Confirm that the P-SOT223-4-1 package footprint matches the target PCB design, particularly regarding the thermal connection to Pin 4. Ensure compliance with IEC climatic category 55/150/56 requirements for the intended operating environment.

Single FETs, MOSFETs Selection Notes

Select this component when a P-Channel MOSFET with a -100 V rating and low gate charge is required. The logic-level threshold allows direct interfacing with standard control signals. Consider the thermal resistance characteristics and the specific need for high dv/dt immunity in the application circuit design.

Single FETs, MOSFETs Part Context

This part belongs to the BSP316 series of SIPMOS transistors designed for small-signal applications. It represents a silicon-based enhancement mode device optimized for efficient switching. The technology focuses on combining low on-resistance with high reliability in a compact surface-mount form factor suitable for automated assembly.

Single FETs, MOSFETs Replacement Considerations

Check for BSP316P variants with different suffixes if specific packaging or tape configurations are required. Verify pinout compatibility before substituting with other P-Channel MOSFETs in the same voltage class.

BSP316PE6327TBSP316PE6327T
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