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BSP316PE6327T is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 100V 680MA SOT223-4. Review the specifications below when checking this part for your BOM.
The BSP316PE6327T is a P-Channel SIPMOS small-signal transistor manufactured by Infineon Technologies. It features a -100 V drain-source breakdown voltage and supports a continuous drain current of -0.68 A at 25°C. The device exhibits a maximum on-state resistance of 1.8 Ω at VGS = -10 V. It operates within an ambient temperature range of -55°C to +150°C and dissipates up to 1.8 W of power. The component utilizes a P-SOT223-4-1 package with logic-level gate drive capability.
Verify the specific ordering code Q67042-S4165 against the datasheet to ensure correct tape and reel specifications. Confirm that the P-SOT223-4-1 package footprint matches the target PCB design, particularly regarding the thermal connection to Pin 4. Ensure compliance with IEC climatic category 55/150/56 requirements for the intended operating environment.
Select this component when a P-Channel MOSFET with a -100 V rating and low gate charge is required. The logic-level threshold allows direct interfacing with standard control signals. Consider the thermal resistance characteristics and the specific need for high dv/dt immunity in the application circuit design.
This part belongs to the BSP316 series of SIPMOS transistors designed for small-signal applications. It represents a silicon-based enhancement mode device optimized for efficient switching. The technology focuses on combining low on-resistance with high reliability in a compact surface-mount form factor suitable for automated assembly.
Check for BSP316P variants with different suffixes if specific packaging or tape configurations are required. Verify pinout compatibility before substituting with other P-Channel MOSFETs in the same voltage class.
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