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BSP316PH6327XTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 100V 680MA SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP316PH6327XTSA1
- Description：MOSFET P-CH 100V 680MA SOT223-4
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：680mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.8Ohm @ 680mA, 10V
- Vgs(th) (Max) @ Id：2V @ 170µA
- Gate Charge (Qg) (Max) @ Vgs：6.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：146 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP316PH6327XTSA1
Single FETs, MOSFETs Overview
The BSP316PH6327XTSA1 is a P-channel enhancement-mode MOSFET from the Infineon SIPMOS series. It features a -100 V drain-source voltage and a continuous drain current of -0.68 A at 25°C. The device has a maximum on-state resistance of 1.8 Ω at VGS=-10V. It operates within a temperature range of -55°C to +150°C, dissipates up to 1.8 W, and utilizes a PG-SOT223-4-1 surface-mount package.
Single FETs, MOSFETs Feature Summary
- Logic-level gate drive capability for direct microcontroller interfacing
- High reverse diode dv/dt rating of 6 kV/µs for robust switching performance
- Qualified according to AEC-Q101 automotive standards
Single FETs, MOSFETs Applications
- Automotive load switching applications
- Low-side power control circuits
- General-purpose small-signal transistor switching
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix H6327XTSA1 against official Infineon documentation to confirm packaging details and tape-and-reel specifications. Ensure that the component meets all required environmental and reliability standards for the intended deployment environment before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component when a P-channel switch with a -100 V breakdown voltage is required. The logic-level threshold allows for efficient driving from standard low-voltage logic sources. Consider the thermal characteristics and package size if high-frequency or high-current switching operations are anticipated in the design.
Single FETs, MOSFETs Part Context
This part belongs to the Infineon SIPMOS family of small-signal transistors. It is designed as a surface-mount solution for compact electronic designs. The device integrates a single P-channel MOSFET structure optimized for general-purpose switching tasks within automotive and industrial electronics sectors.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon cross-reference documentation for verified substitute part numbers. Do not assume compatibility based solely on similar electrical ratings without verifying pinout and package dimensions.
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