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BSP318S E6327 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 2.6A SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP318S E6327
- Description：MOSFET N-CH 60V 2.6A SOT223-4
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：90mOhm @ 2.6A, 10V
- Vgs(th) (Max) @ Id：2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs：20 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：380 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP318S E6327
Single FETs, MOSFETs Overview
The BSP318S E6327 is an N-channel enhancement mode SIPMOS small-signal transistor in a PG-SOT223-4 package. It features a drain-source voltage of 60 V, continuous drain current of 2.6 A, and low on-state resistance of 0.09 Ω at VGS=10 V. The device is avalanche rated with single pulse energy capability of 60 mJ and dv/dt rated up to 6 kV/µs. Operating temperature range spans -55 °C to +150 °C. It meets AEC-Q101 qualification standards.
Single FETs, MOSFETs Feature Summary
- Avalanche rated for robustness against inductive load switching events
- Logic level gate drive compatibility for direct microcontroller interfacing
- High dv/dt rating enables reliable operation in fast-switching topologies
- Automotive qualified according to AEC-Q101 reliability standards
Single FETs, MOSFETs Applications
- Low-side switching in automotive lighting circuits
- Motor control applications requiring high surge current handling
- General purpose power switching in industrial equipment
- DC-DC converter output stages
Single FETs, MOSFETs Procurement Notes
Verify the complete ordering code includes the suffix 'E6327' to confirm the specific tape and reel packaging configuration containing 1000 pieces per reel. Confirm RoHS compliance and Pb-free lead plating status matches project requirements. Ensure storage conditions adhere to non-dry pack specifications if moisture sensitivity is a concern during assembly.
Single FETs, MOSFETs Selection Notes
Select this component when a 60 V N-channel MOSFET with logic-level drive is required in a compact SOT-223 footprint. The low RDS(on) minimizes conduction losses at 2.6 A. Consider the avalanche rating for inductive loads. Verify thermal management capabilities align with the specified junction-to-solder point thermal resistance for the target application environment.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's SIPMOS family of small-signal transistors designed for efficient power switching. The E6327 suffix denotes the specific reel packaging variant. It complements other logic-level MOSFETs in the portfolio by offering a balance of low on-resistance and ruggedness suitable for demanding automotive and industrial environments.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with BSP318SH6327XTSA1 for identical electrical characteristics and packaging. Verify pinout compatibility (Pin 1: Gate, Pin 2/4: Drain, Pin 3: Source) before substitution. Ensure replacement parts meet the same AEC-Q101 qualification standards.
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