BSP318SH6327XTSA1

$0.94

Description：MOSFET N-CH 60V 2.6A SOT223-4
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3d0484c5f591 Category: Single FETs, MOSFETs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

BSP318SH6327XTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 2.6A SOT223-4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSP318SH6327XTSA1

Description：MOSFET N-CH 60V 2.6A SOT223-4
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：2.6A (Tj)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：90mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id：2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs：20 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：380 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.8W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT223-4
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for BSP318SH6327XTSA1

BSP318SH6327XTSA1

Single FETs, MOSFETs Overview

The BSP318SH6327XTSA1 is an N-channel enhancement-mode MOSFET from the Infineon SIPMOS series, housed in a PG-SOT223 L6327 surface-mount package. It features a drain-source voltage of 60 V and a continuous drain current of 2.6 A at Tj = 25 °C. The device exhibits a maximum on-state resistance of 0.12 Ω at VGS = 4.5 V and 2.6 A. It supports a pulsed drain current of 10.4 A and includes avalanche energy ratings (EAS: 60 mJ). The component operates within a temperature range of -55 °C to +150 °C and complies with RoHS standards.

Single FETs, MOSFETs Feature Summary

Avalanche rated for robustness against transient energy events
Logic level gate drive capability for direct microcontroller interfacing
dv/dt rated internal body diode for high-speed switching applications

Single FETs, MOSFETs Applications

Low-side power switching in automotive electronics
General-purpose load control circuits
DC-DC converter output stages

Single FETs, MOSFETs Procurement Notes

Verify the complete part number BSP318SH6327XTSA1 matches the required PG-SOT223 L6327 tape and reel packaging configuration. Confirm that the specific suffix indicates Pb-free lead plating and RoHS compliance as documented in the official datasheet specifications before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a low-voltage N-channel switch with logic-level compatibility is required. Ensure the application current remains below the 2.6 A continuous limit or utilizes appropriate thermal management for higher loads. Verify that the 60 V breakdown voltage exceeds the maximum circuit voltage including transients.

Single FETs, MOSFETs Part Context

This component belongs to the Infineon SIPMOS small-signal transistor family, designed for efficient power switching in compact form factors. The PG-SOT223 package provides a balance between thermal performance and board space efficiency, suitable for automated surface-mount assembly processes in consumer and industrial electronic devices.