ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
BSP320S E6327 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 2.9A SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP320S E6327
- Description：MOSFET N-CH 60V 2.9A SOT223-4
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：2.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：120mOhm @ 2.9A, 10V
- Vgs(th) (Max) @ Id：4V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs：12 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：340 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP320S E6327
Single FETs, MOSFETs Overview
The BSP320S E6327 is an N-channel enhancement mode MOSFET from Infineon's SIPMOS series, housed in a surface-mount SOT-223 package. It features a drain-source breakdown voltage of 60 V and a continuous drain current rating of 2.9 A at 25°C. The device exhibits a maximum on-resistance of 120 mΩ and a typical gate charge of 9.7 nC. It operates within a temperature range of -55°C to +150°C with a power dissipation capacity of 1.8 W. The component holds AEC-Q101 automotive qualification.
Single FETs, MOSFETs Feature Summary
- Automotive-grade reliability certified under the AEC-Q101 standard for robust performance in demanding environments.
- High switching efficiency enabled by low gate charge characteristics suitable for high-frequency applications.
- Enhanced thermal stability allowing operation across a wide industrial temperature spectrum.
Single FETs, MOSFETs Applications
- Automotive electronic control units requiring qualified discrete semiconductors
- General-purpose low-side switching circuits
- Power management modules in compact consumer electronics
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix H6327 or E6327 against official datasheets to confirm tape-and-reel specifications. Confirm end-of-life status as some listings indicate obsolescence. Ensure compatibility with automated assembly processes given the SOT-223 form factor. Cross-reference RoHS compliance documentation for regulatory adherence.
Single FETs, MOSFETs Selection Notes
Select this component when a single N-channel MOSFET with 60V capability and moderate current handling is required. The SIPMOS technology offers a balance between conduction losses and switching speed. Consider the SOT-223 package constraints for thermal management in dense PCB layouts compared to larger packages.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's broad portfolio of silicon MOSFETs designed for power switching. The SIPMOS series specifically targets cost-effective solutions for general power applications. The BSP320 variant represents a standard generation of planar technology optimized for volume manufacturing.
Single FETs, MOSFETs Replacement Considerations
Check for BSP320SH6327XTSA1 as a direct equivalent with identical electrical parameters. Verify pinout compatibility before substituting with other 60V N-channel devices in the SOT-223 package family.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
