BSP320S E6433

Single FETs, MOSFETs Overview

The BSP320S E6433 is an N-channel enhancement mode MOSFET from Infineon Technologies, utilizing OptiMOS technology. It features a 60 V drain-source breakdown voltage and supports a continuous drain current of 2.9 A at 25°C. The device exhibits a maximum on-resistance of 120 mΩ at a gate drive of 10 V. Key electrical parameters include a gate charge of 9.7 nC and a threshold voltage range of 2.1 V to 4 V. It operates within a temperature range of -55°C to +150°C and is housed in a SOT-223 package.

Single FETs, MOSFETs Feature Summary

• OptiMOS technology provides low on-resistance for efficient power switching.
• Automotive qualification ensures reliability under harsh operating conditions.
• Enhancement mode operation allows standard logic-level control.

Single FETs, MOSFETs Applications

• Low-side power switching in automotive systems
• General-purpose load switching applications
• DC-DC converter output stages

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix E6433 against official Infineon documentation to confirm tape-and-reel packaging details. Confirm RoHS compliance status through the manufacturer's material content sheet. Check the product lifecycle status as some listings indicate end-of-life phases. Ensure the ordering part number matches the exact pin configuration required for the target PCB footprint.

Single FETs, MOSFETs Selection Notes

Select this component when a robust N-channel switch with 60 V rating is required. The 2.9 A current capability suits moderate load applications. Verify that the 120 mΩ on-resistance meets thermal dissipation requirements for the specific duty cycle. The SOT-223 package offers a balance between current handling and board space constraints compared to smaller packages.

Single FETs, MOSFETs Part Context

This part belongs to the BSP320 series of small signal and small power MOSFETs. The series is designed for cost-effective solutions in consumer and automotive electronics. The E6433 suffix typically denotes a specific reel quantity or packaging variant defined by Infineon. These devices are optimized for high-volume manufacturing and consistent performance across temperature ranges.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 60 V rating, N-channel type, and SOT-223-4 package. Verify equivalent Rds(on) and Id specifications. Cross-reference with other Infineon OptiMOS parts in the same voltage class if availability is constrained.