Single FETs, MOSFETs BSP320SH6327XTSA1 product image

BSP320SH6327XTSA1

$0.96
  • Description:MOSFET N-CH 60V 2.9A SOT223-4
  • Series:SIPMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:e9e2286f9fb2 Category: Brand:

  
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BSP320SH6327XTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 2.9A SOT223-4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSP320SH6327XTSA1

  • Description:MOSFET N-CH 60V 2.9A SOT223-4
  • Series:SIPMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:2.9A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:120mOhm @ 2.9A, 10V
  • Vgs(th) (Max) @ Id:4V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:340 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):1.8W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-SOT223-4
  • Package / Case:TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for BSP320SH6327XTSA1

BSP320SH6327XTSA1

Single FETs, MOSFETs Overview

The BSP320SH6327XTSA1 is a single N-channel enhancement mode MOSFET manufactured by Infineon Technologies. It features a silicon technology base and is housed in an SOT-223-4 surface-mount package. The device supports a drain-source breakdown voltage (Vds) of 60 V and delivers a continuous drain current (Id) of 2.9 A. Its on-state resistance (Rds(on)) is specified at 90 mOhms, with a gate-source voltage range of -20 V to +20 V. The threshold voltage (Vgs(th)) is 3 V, and the total gate charge (Qg) is 9.7 nC. Thermal performance includes a power dissipation (Pd) of 1.8 W and an operating temperature range from -55 °C to +150 °C. The component holds AEC-Q101 qualification for automotive applications.

Single FETs, MOSFETs Feature Summary

  • Automotive-grade reliability certified under AEC-Q101 standards
  • High-speed switching capability with defined rise and fall times
  • Robust thermal management supporting high junction temperatures up to 150 °C

Single FETs, MOSFETs Applications

  • Automotive load switching circuits
  • General-purpose power control applications
  • Low-side switching in electronic control units

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix H6327XTSA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Confirm that the SOT-223-4 pinout matches the target PCB footprint design. Ensure compliance with RoHS directives as indicated in the product specifications before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 60 V N-channel MOSFET with low on-resistance is required for automotive or industrial environments. The 2.9 A current rating suits moderate power switching tasks. Verify that the 90 mOhm Rds(on) meets efficiency targets and that the SOT-223-4 package fits the available board space constraints.

Single FETs, MOSFETs Part Context

This part belongs to the BSP320 series of N-channel MOSFETs from Infineon Technologies. It is designed for general-purpose switching applications requiring robust performance in automotive and industrial sectors. The device utilizes standard silicon technology optimized for cost-effective mass production while maintaining high reliability standards.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon replacement guides for verified substitutes. No public substitute part numbers are confirmed in the provided data.

BSP320SH6327XTSA1BSP320SH6327XTSA1
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