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BSP321PH6327XTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 100V 980MA SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP321PH6327XTSA1
- Description：MOSFET P-CH 100V 980MA SOT223-4
- Series：SIPMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：980mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：900mOhm @ 980mA, 10V
- Vgs(th) (Max) @ Id：4V @ 380µA
- Gate Charge (Qg) (Max) @ Vgs：12 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：319 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP321PH6327XTSA1
Single FETs, MOSFETs Overview
The BSP321PH6327XTSA1 is a P-channel enhancement-mode MOSFET from the Infineon SIPMOS series, housed in a PG-SOT-223 surface-mount package. It features a maximum drain-source voltage of -100 V and a continuous drain current of -0.98 A at 25 °C. The device has a maximum on-state resistance of 900 mΩ and a typical gate charge of 9 nC. It operates within a temperature range of -55 °C to 150 °C and is qualified according to AEC-Q101 standards.
Single FETs, MOSFETs Feature Summary
- Avalanche rated for robust operation under transient conditions
- Qualified according to AEC-Q101 automotive standards
- RoHS compliant with lead-free plating and halogen-free construction
Single FETs, MOSFETs Applications
- Automotive electronic systems requiring high reliability
- Low-side switching applications in power management circuits
- General-purpose small-signal transistor tasks
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix H6327XTSA1 matches the required tape and reel quantity of 1000 pieces per reel. Confirm that the PG-SOT-223 footprint aligns with your PCB design constraints. Ensure compliance with RoHS and halogen-free requirements if mandated by your project specifications. Cross-reference the datasheet revision to confirm parameter consistency.
Single FETs, MOSFETs Selection Notes
Select this component when a P-channel MOSFET with a 100 V breakdown voltage is required. The low gate charge supports efficient switching performance. Consider the thermal resistance values for your specific cooling area setup. Verify that the continuous current rating meets the load requirements without exceeding the safe operating area limits.
Single FETs, MOSFETs Part Context
This part belongs to the Infineon SIPMOS family of small-signal transistors. It utilizes standard silicon technology optimized for general-purpose switching. The PG-SOT-223 package provides a compact solution for surface-mount assembly. It serves as a discrete alternative to integrated driver solutions in simple control loops.
Single FETs, MOSFETs Replacement Considerations
Check for direct substitutes within the BSP32xP series or other Infineon P-channel MOSFETs with matching -100 V ratings and similar RDS(on) characteristics. Ensure any replacement maintains the same PG-SOT-223 footprint and pinout configuration.
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