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BSP322PH6327XTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 100V 1A SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP322PH6327XTSA1
- Description：MOSFET P-CH 100V 1A SOT223-4
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：800mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id：1V @ 380µA
- Gate Charge (Qg) (Max) @ Vgs：16.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：372 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP322PH6327XTSA1
Single FETs, MOSFETs Overview
The BSP322PH6327XTSA1 is a P-Channel enhancement mode MOSFET from the Infineon SIPMOS series, housed in a PG-SOT-223 surface-mount package. It features a maximum drain-source voltage of -100 V and a continuous drain current of -1 A at 25 °C case temperature. The device has a maximum on-state resistance of 800 mΩ at VGS=-10 V and ID=-1 A. It is avalanche rated with an energy capability of 4 mJ at ID=-1 A. The component operates within a junction temperature range of -55 °C to 150 °C and complies with RoHS standards.
Single FETs, MOSFETs Feature Summary
- Avalanche rated for robust operation under transient conditions
- Logic level gate drive capability for direct interface with digital control circuits
- Halogen-free construction compliant with IEC61249-2-21 standards
Single FETs, MOSFETs Applications
- High-side switching applications in automotive electronics
- Power management modules requiring logic-level control
- General-purpose load switching circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix H6327 against official Infineon documentation to confirm tape and reel quantities and packaging specifications. Ensure that the requested part number matches the exact electrical ratings and package outline required for your design. Cross-reference the datasheet revision to confirm all thermal and electrical parameters align with your system requirements before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component when a P-Channel MOSFET with high-voltage tolerance (-100 V) and logic-level gate drive is required. Consider its avalanche rating for applications subject to inductive load switching. Evaluate the thermal resistance characteristics relative to your PCB footprint and cooling strategy to ensure safe operating temperatures are maintained under continuous load conditions.
Single FETs, MOSFETs Part Context
This component belongs to the Infineon SIPMOS small-signal transistor family, designed for efficient power switching in compact form factors. The PG-SOT-223 package provides a balance between current handling capability and board space efficiency. As an automotive-qualified device (AEC-Q101), it is suitable for demanding environments where reliability and long-term performance are critical.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon substitution guides or cross-reference tools for verified alternative part numbers. Do not assume functional equivalence based solely on package type or general voltage/current ratings without verifying specific electrical parameters and pin configurations.
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