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BSP322PL6327HTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 100V 1A SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP322PL6327HTSA1
- Description：MOSFET P-CH 100V 1A SOT223-4
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：800mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id：1V @ 380µA
- Gate Charge (Qg) (Max) @ Vgs：16.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：372 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4-21
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP322PL6327HTSA1
Single FETs, MOSFETs Overview
The BSP322PL6327HTSA1 is a P-Channel enhancement-mode MOSFET from Infineon's SIPMOS series, housed in a PG-SOT-223 package. It features a drain-source breakdown voltage of -100 V and a continuous drain current of -1 A at 25 °C case temperature. The device has a maximum on-state resistance of 800 mΩ at VGS = -10 V and 1000 mΩ at VGS = -4.5 V. It supports a pulsed drain current of -4 A and includes avalanche rating capabilities.
Single FETs, MOSFETs Feature Summary
- Avalanche rated for robust operation under transient energy conditions
- Logic level gate drive capability for direct interface with standard logic circuits
- Halogen-free construction compliant with IEC61249-2-21 standards
- Qualified according to AEC-Q101 automotive reliability standards
Single FETs, MOSFETs Applications
- Small power switching applications
- Load switching circuits
- Power management modules
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix L6327HTSA1 against official Infineon documentation to confirm tape and reel packaging quantities and lead times. Ensure component authenticity through authorized distribution channels. Confirm RoHS compliance and halogen-free status requirements match project specifications before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring a -100 V P-Channel MOSFET with low on-resistance in a compact surface-mount package. Consider the thermal resistance characteristics when determining heat dissipation needs. Verify that the gate threshold voltage range aligns with the available control logic levels in the target application circuit design.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's SIPMOS small-signal transistor family, designed for efficient power switching. The PG-SOT-223 package provides a balance between current handling capacity and board space efficiency. The product line emphasizes high reliability and compliance with stringent environmental and automotive qualification standards.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon cross-reference documents for verified substitute part numbers. Do not assume functional equivalence based solely on pinout or generic package type without verifying electrical parameters.
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