BSP324 E6327

Single FETs, MOSFETs Overview

The BSP324 E6327 is an N-channel SIPMOS power transistor in a PG-SOT223 package. It features a drain-source voltage of 400 V and a continuous drain current of 0.17 A at 25°C. The device has a maximum on-state resistance of 25 Ω at VGS=10V and supports a pulsed drain current of 0.68 A. It includes dv/dt rating capabilities, operates within a junction temperature range of -55 to +150 °C, and is qualified according to AEC-Q101 standards.

Single FETs, MOSFETs Feature Summary

• N-channel enhancement mode logic level operation
• dv/dt rated SOT-223 packaging for high-speed switching applications
• AEC-Q101 qualification for automotive reliability

Single FETs, MOSFETs Applications

• High-voltage low-current switching circuits
• Automotive electronic control units requiring robust transient performance
• Power management modules utilizing SIPMOS technology

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix E6327 corresponds to the standard tape and reel configuration containing 1000 pieces per reel as defined in the product summary. Confirm that the Pb-free lead plating and RoHS compliance status align with current regulatory requirements for your assembly process before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 400 V breakdown voltage is required alongside a low continuous current capacity of 0.17 A. The logic-level gate threshold allows direct drive from standard logic interfaces. Ensure thermal management accounts for the 1.8 W power dissipation limit at 25°C ambient temperature and the specified thermal resistance values for PCB mounting.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's SIPMOS family, designed for small-signal power applications. The BSP324 utilizes silicon planar technology optimized for high voltage blocking in compact surface-mount packages. It serves as a discrete solution for applications needing reliable switching without the complexity of integrated driver circuits.

Single FETs, MOSFETs Replacement Considerations

Check datasheets for alternative N-channel MOSFETs offering similar 400 V ratings and PG-SOT223 footprints. Verify pinout compatibility and ensure replacement devices meet or exceed the original dv/dt specifications and AEC-Q101 qualification if used in automotive contexts.

Single FETs, MOSFETs FAQ

What is the maximum dv/dt rating for the reverse diode?

The device supports a reverse diode dv/dt rating of 6 kV/µs under conditions of IS=0.17A, VDS=320V, di/dt=200A/µs, and Tjmax=175°C.

Is the BSP324 qualified for automotive applications?

Yes, the component is qualified according to the AEC-Q101 standard.