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BSP324L6327HTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 400V 170MA SOT223-4. Review the specifications below when checking this part for your BOM.
The BSP324L6327HTSA1 is a Pb-free, RoHS-compliant N-channel enhancement-mode power transistor from Infineon Technologies' SIPMOS series. It features a 400V drain-source breakdown voltage and a maximum continuous drain current of 0.17A at 25°C. The device utilizes a PG-SOT223-4 package with logic-level gate drive capability. Key electrical characteristics include a maximum on-state resistance of 25Ω at VGS=10V and a dv/dt rating of 6kV/µs. It operates within a junction temperature range of -55°C to +150°C and meets AEC-Q101 automotive qualification standards.
Verify the component status as the BSP324 may be subject to obsolescence or lifecycle changes. Confirm that the L6327 suffix corresponds to the specific tape and reel packaging containing 1000 pieces per reel. Ensure compliance with RoHS and Pb-free requirements matches project specifications before finalizing procurement orders.
Select this component when a 400V N-channel MOSFET with low gate charge is required in a compact SOT-223 footprint. Consider the 25Ω RDS(on) limit at VGS=10V for conduction loss calculations. Evaluate the thermal resistance values against the expected ambient temperature and PCB copper area constraints to ensure safe operating area limits are not exceeded during pulsed operation.
This part belongs to the BSP324 product family within Infineon's SIPMOS portfolio. The L6327 suffix indicates the specific packaging configuration (tape and reel). The device is designed for small signal and small power applications where high voltage blocking capability and fast switching speeds are necessary in a surface-mount format.
Check for direct cross-reference availability from other manufacturers offering equivalent 400V N-channel MOSFETs in SOT-223 packages. Verify pinout compatibility and thermal characteristics if substituting with non-Infineon components.
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