Single FETs, MOSFETs BSP372 E6327 product image

BSP372 E6327

  • Description:MOSFET N-CH 100V 1.7A SOT223-4
  • Series:SIPMOS®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)

SKU:b61e86a6b0fb Category: Brand:

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BSP372 E6327 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 1.7A SOT223-4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSP372 E6327

  • Description:MOSFET N-CH 100V 1.7A SOT223-4
  • Series:SIPMOS®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:1.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):5V
  • Rds On (Max) @ Id, Vgs:310mOhm @ 1.7A, 5V
  • Vgs(th) (Max) @ Id:2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±14V
  • Input Capacitance (Ciss) (Max) @ Vds:520 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):1.8W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-SOT223-4
  • Package / Case:TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for BSP372 E6327

BSP372 E6327

Single FETs, MOSFETs Overview

The BSP372 E6327 is a single N-channel enhancement-mode small-signal MOSFET manufactured by Infineon Technologies. It utilizes SIPMOS technology and features an avalanche-rated design for robust operation. The device is housed in a PG-SOT223 package with four pins, configured as Gate, Drain, Source, and Drain. Key electrical parameters include a drain-source breakdown voltage of 100 V, a continuous drain current of 1.7 A at 28°C, and a maximum DC pulsed drain current of 6.8 A. The gate threshold voltage ranges from 0.8 V to 2.0 V, while the drain-source on-state resistance is typically 0.24 Ω and maximally 0.31 Ω at VGS = 5 V and ID = 1.7 A. The component supports a power dissipation of 1.8 W at 25°C and operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

  • Avalanche rated capability for handling energy surges
  • Logic level gate drive compatibility
  • SIPMOS technology for high-frequency switching

Single FETs, MOSFETs Applications

  • Small-signal switching applications
  • Power management circuits requiring logic-level control
  • Automotive electronics compliant with AEC-Q101 standards

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix E6327 against official Infineon documentation to confirm packaging details and compliance status. Ensure that the procurement channel provides valid traceability for automotive-grade components. Cross-reference the datasheet revision date to ensure alignment with current manufacturing specifications. Confirm RoHS compliance and Pb-free lead plating requirements prior to finalizing orders.

Single FETs, MOSFETs Selection Notes

Select this component when a single N-channel MOSFET with logic-level gate drive is required for small-signal applications. The 100 V breakdown voltage and 1.7 A continuous current rating suit moderate power switching tasks. Consider the avalanche rating if the circuit environment presents inductive load risks. The PG-SOT223 package offers a compact footprint suitable for space-constrained PCB layouts.

Single FETs, MOSFETs Part Context

The BSP372 belongs to Infineon's SIPMOS small-signal transistor family, designed for efficient power switching. This series emphasizes low on-resistance and fast switching speeds. The E6327 suffix denotes a specific tape and reel packaging configuration containing 1000 pieces per reel, facilitating automated surface-mount assembly processes.

Single FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are available in the provided source material.

BSP372 E6327BSP372 E6327

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