BSP372L6327HTSA1

Single FETs, MOSFETs Overview

The BSP372L6327HTSA1 is an N-channel enhancement mode logic level MOSFET from Infineon's SIPMOS series, housed in a PG-SOT223 package. It features a drain-source breakdown voltage of 100 V and a continuous drain current of 1.7 A at 28°C. The device has a maximum on-state resistance of 0.31 Ω at VGS = 5 V and ID = 1.7 A, with a gate threshold voltage ranging from 0.8 to 2.0 V. It supports pulsed drain currents up to 6.8 A and single-pulse avalanche energy of 45 mJ. Operating temperatures range from -55°C to +150°C, and it is qualified according to AEC-Q101.

Single FETs, MOSFETs Feature Summary

• Logic level gate drive capability for direct interface with standard digital logic circuits
• Avalanche rated design supporting robust operation under inductive load switching conditions
• Automotive grade qualification ensuring reliability in demanding electronic environments

Single FETs, MOSFETs Applications

• Low-side switching in automotive power distribution systems
• General purpose power management and load control applications
• DC-DC converter output stages requiring high efficiency

Single FETs, MOSFETs Procurement Notes

Verify the component authenticity by checking the marking code against official datasheet specifications. Confirm the ordering suffix matches the required packaging configuration. Ensure the supplier provides traceability documentation compliant with automotive quality standards. Cross-reference the part number with the manufacturer's latest lifecycle status to confirm availability.

Single FETs, MOSFETs Selection Notes

Select this component when a low on-resistance N-channel MOSFET is required for logic-level driven applications. Consider the thermal resistance characteristics for PCB layout optimization. Evaluate the avalanche energy rating if the application involves inductive loads. Verify that the package dimensions fit the target footprint constraints.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's SIPMOS small-signal transistor family, designed for efficient power switching. The BSP372 variant specifically targets applications needing moderate current handling with low conduction losses. The L6327 suffix indicates a specific tape and reel packaging format containing 1000 pieces per reel.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives within the same SIPMOS family. Verify that any substitute meets or exceeds the 100 V breakdown voltage and 1.7 A current ratings. Ensure the replacement maintains the same PG-SOT223 package outline for mechanical compatibility.