BSP373 E6327

Description：MOSFET N-CH 100V 1.7A SOT223-4
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:736bdbd1252a Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSP373 E6327 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 1.7A SOT223-4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSP373 E6327

Description：MOSFET N-CH 100V 1.7A SOT223-4
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：300mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：550 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.8W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT223-4
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for BSP373 E6327

BSP373 E6327

Single FETs, MOSFETs Overview

The BSP373 E6327 is an N-channel enhancement mode SIPMOS small-signal transistor in a PG-SOT223-4 package. It features a drain-source breakdown voltage of 100 V and a continuous drain current of 1.7 A at 28 °C. The device has a maximum gate-source voltage of ±20 V, power dissipation of 1.8 W, and operates within a junction temperature range of -55 to +150 °C. It is avalanche rated with single pulse energy capability of 45 mJ.

Single FETs, MOSFETs Feature Summary

Avalanche rated for robust operation under inductive load switching conditions
Enhancement mode N-channel architecture optimized for small-signal applications
Qualified according to AEC-Q101 standards for automotive reliability

Single FETs, MOSFETs Applications

Small-signal switching circuits
Automotive electronic control units
General purpose power management

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix L6327 corresponds to the tape and reel quantity of 1000 pieces per reel as documented in the datasheet. Confirm that the component meets Pb-free lead plating requirements and RoHS compliance specifications before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 100 V N-channel MOSFET with 1.7 A continuous current capability is required. Ensure the application demands an enhancement mode device suitable for low-voltage logic interfacing. Verify thermal management requirements align with the specified thermal resistance values for the target operating environment.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's SIPMOS small-signal transistor family. It utilizes standard silicon technology housed in a surface-mount PG-SOT223-4 package. The device is designed for high-efficiency switching applications requiring reliable performance in compact form factors.