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BSP373L6327HTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 1.7A SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP373L6327HTSA1
- Description：MOSFET N-CH 100V 1.7A SOT223-4
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：1.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：300mOhm @ 1.7A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：550 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP373L6327HTSA1
Single FETs, MOSFETs Overview
The BSP373L6327HTSA1 is an N-channel enhancement mode SIPMOS small-signal transistor in a PG-SOT223 package. It features a drain-source breakdown voltage of 100 V and a continuous drain current of 1.7 A at 28°C. The maximum on-state resistance is 0.3 Ω at VGS=10 V and ID=1.7 A. Gate threshold voltage ranges from 2.1 to 4.0 V. It supports pulsed drain currents up to 6.8 A and single-pulse avalanche energy of 45 mJ. Power dissipation is 1.8 W at 25°C, with an operating temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Avalanche rated for robust operation under transient conditions
- Enhancement mode N-channel configuration for efficient switching
- Qualified according to AEC-Q101 standards for automotive reliability
Single FETs, MOSFETs Applications
- Automotive power management circuits
- General-purpose low-side switching applications
- Load drive circuits requiring high surge capability
Single FETs, MOSFETs Procurement Notes
Verify the component against official Infineon datasheets to confirm electrical parameters and pinout compatibility. Ensure the ordering suffix matches the required tape and reel quantity. Check for RoHS compliance and Pb-free lead plating specifications during procurement validation.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring 100 V blocking capability and moderate current handling. Consider the thermal resistance and power dissipation limits when designing heat sinks or PCB copper areas. Verify gate drive voltages align with the specified threshold range for optimal switching performance.
Single FETs, MOSFETs Part Context
This device belongs to the BSP373 series of SIPMOS transistors manufactured by Infineon Technologies. It utilizes silicon technology and is designed for surface mount installation. The part is specifically engineered to meet automotive industry quality requirements while providing reliable performance in compact form factors.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes must match the N-channel enhancement mode specification, 100 V rating, and PG-SOT223 package. Verify that alternative components meet the same AEC-Q101 qualification and avalanche energy ratings to ensure functional equivalence in existing designs.
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