Single Bipolar Transistors BSP51H6327XTSA1 product image

BSP51H6327XTSA1

  • Description:TRANS NPN DARL 60V 1A SOT223-4
  • Series:-

SKU:2a2b11d2875b Category: Brand:

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BSP51H6327XTSA1 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRANS NPN DARL 60V 1A SOT223-4. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BSP51H6327XTSA1

  • Description:TRANS NPN DARL 60V 1A SOT223-4
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:1.8V @ 1mA, 1A
  • Current - Collector Cutoff (Max):10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:2000 @ 500mA, 10V
  • Power - Max:1.5 W
  • Frequency - Transition:200MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-261-4, TO-261AA
  • Supplier Device Package:PG-SOT223-4
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for BSP51H6327XTSA1

BSP51H6327XTSA1

Single Bipolar Transistors Overview

The BSP51H6327XTSA1 is a single NPN Darlington bipolar junction transistor manufactured by Infineon Technologies. It features a collector-emitter voltage rating of 60 V and supports a continuous collector current of 1 A. The device is designed for surface mount applications in the PG-SOT223-4 package, which includes three electrical pins and one thermal tab. It offers a power dissipation capacity of 1.5 W to 1.8 W and operates within an ambient temperature range from -55 °C to +150 °C. With a transition frequency of 200 MHz, it serves as a robust switching component for automotive-grade electronic circuits.

Single Bipolar Transistors Feature Summary

  • Darlington configuration providing high current gain for efficient signal amplification
  • Automotive qualification ensuring reliability under demanding environmental conditions
  • Integrated thermal pad design for effective heat dissipation in compact layouts

Single Bipolar Transistors Applications

  • Automotive lighting control systems
  • High-current switching loads in vehicle electronics
  • General-purpose amplifier stages in automotive modules

Single Bipolar Transistors Procurement Notes

Verify the specific datasheet revision and ordering suffix to ensure compatibility with your design requirements. Confirm that the PG-SOT223-4 footprint matches your PCB layout, paying attention to the thermal pad connection. Check for any recent updates regarding RoHS compliance or material declarations before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when a high-gain NPN switch is required in a space-constrained automotive environment. The Darlington structure simplifies drive circuitry by reducing base current requirements. Ensure the application voltage does not exceed the 60 V limit and that thermal management strategies account for the 1.5 W dissipation capability.

Single Bipolar Transistors Part Context

This part belongs to Infineon's portfolio of automotive-grade discrete semiconductors. It is specifically engineered for the PG-SOT223-4 form factor, balancing electrical performance with thermal efficiency. The designation indicates its suitability for mass production in automotive supply chains where long-term reliability is critical.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

BSP51H6327XTSA1BSP51H6327XTSA1

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