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BSP603S2LHUMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 5.2A SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP603S2LHUMA1
- Description：MOSFET N-CH 55V 5.2A SOT223-4
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：5.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：33mOhm @ 2.6A, 10V
- Vgs(th) (Max) @ Id：2V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs：42 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1390 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP603S2LHUMA1
Single FETs, MOSFETs Overview
The BSP603S2LHUMA1 is an N-channel MOSFET from the OptiMOS B family, designed for automotive applications. It features a drain-source voltage of 55 V and a continuous drain current of 5.2 A at 25°C. The device offers a low on-resistance of 33 mΩ at a gate-source voltage of 10 V. It operates within a temperature range of -55°C to +150°C and is housed in a SOT-223 package.
Single FETs, MOSFETs Feature Summary
- Optimized low on-resistance for high efficiency
- AEC-Q101 qualified for automotive reliability
- RoHS compliant green product construction
Single FETs, MOSFETs Applications
- Automotive smart power distribution
- High-side switching applications
- Load management systems
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix HUMA1 against official Infineon documentation to confirm packaging details such as tape and reel specifications. Ensure the component meets the required environmental standards and automotive qualification levels before finalizing procurement plans.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring robust N-channel switching with low conduction losses. Consider the thermal performance and package constraints when designing for high-current environments. Verify compatibility with standard gate drive voltages for optimal switching characteristics.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS B series, which utilizes advanced silicon technology to achieve superior performance in terms of on-resistance and switching speed. The series is specifically engineered to meet the stringent demands of modern automotive electronic systems.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon resources for verified cross-references or updated derivatives. Do not substitute without confirming electrical parameter alignment and package compatibility.
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