Single FETs, MOSFETs BSP613P product image

BSP613P

  • Description:MOSFET P-CH 60V 2.9A SOT223-4
  • Series:SIPMOS®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)

SKU:9ee8402e0516 Category: Brand:

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BSP613P is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 60V 2.9A SOT223-4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSP613P

  • Description:MOSFET P-CH 60V 2.9A SOT223-4
  • Series:SIPMOS®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:2.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:130mOhm @ 2.9A, 10V
  • Vgs(th) (Max) @ Id:4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:33 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:875 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):1.8W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-SOT223-4-21
  • Package / Case:TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for BSP613P

BSP613P

Single FETs, MOSFETs Overview

The BSP613P is a P-channel enhancement mode MOSFET from the Infineon SIPMOS series, housed in a PG-SOT223 package. It features a maximum drain-source voltage of -60 V and a continuous drain current of -2.9 A at 25°C. The device has a typical on-state resistance of 0.11 Ω and a total gate charge of 22 nC. It supports an avalanche energy rating of 150 mJ and a reverse diode dv/dt capability of 6 kV/µs. Operating temperatures range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

  • Avalanche rated for robust operation under inductive load switching conditions
  • High dv/dt rated body diode suitable for fast switching applications
  • Qualified according to AEC-Q101 automotive standards

Single FETs, MOSFETs Applications

  • Fast switching buck converters
  • Automotive electronic systems requiring AEC-Q101 compliance
  • General purpose low-side switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix H6327XTSA1 against official Infineon documentation to confirm packaging details such as tape and reel quantities. Ensure that the component meets the required environmental specifications, including halogen-free status per IEC61249-2-21, before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a P-channel MOSFET with high dv/dt capability and avalanche ruggedness is required. The PG-SOT223 package provides a balance of thermal performance and compact footprint. Consider the -60 V breakdown voltage and 2.9 A current rating to ensure adequate headroom for the target circuit design.

Single FETs, MOSFETs Part Context

The BSP613P belongs to Infineon's SIPMOS small-signal transistor family. This series focuses on providing reliable performance in surface-mount packages while maintaining high switching speeds. The part is designed to meet automotive quality requirements, making it suitable for demanding environments where reliability is critical.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes within the Infineon SIPMOS portfolio that share the PG-SOT223 package and similar electrical characteristics. Verify pinout compatibility and thermal resistance values to ensure seamless integration into existing PCB layouts without redesign.

Single FETs, MOSFETs FAQ

What is the maximum avalanche energy rating for the BSP613P?

The BSP613P is rated for a single pulse avalanche energy (EAS) of 150 mJ under specified test conditions.

Is the BSP613P qualified for automotive applications?

Yes, the BSP613P is qualified according to the AEC-Q101 standard for automotive grade components.

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