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BSP613PH6327XTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 60V 2.9A SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP613PH6327XTSA1
- Description：MOSFET P-CH 60V 2.9A SOT223-4
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：2.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：130mOhm @ 2.9A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：33 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：875 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP613PH6327XTSA1
Single FETs, MOSFETs Overview
The BSP613PH6327XTSA1 is a P-channel enhancement-mode MOSFET from the Infineon SIPMOS series, housed in a PG-SOT223 surface-mount package. It features a maximum drain-source voltage of -60 V and a continuous drain current of -2.9 A at 25°C. The device has a typical on-state resistance of 0.11 Ω and a total gate charge of 22 nC. It supports an avalanche energy rating of 150 mJ and a reverse diode dv/dt capability of 6 kV/µs. Operating temperatures range from -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Avalanche rated for robustness against inductive load switching events
- High dv/dt rated reverse diode suitable for fast-switching applications
- Optimized for high-frequency operation in buck converter topologies
Single FETs, MOSFETs Applications
- Fast switching buck converters
- Automotive power management circuits
- General-purpose low-side or high-side switching
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix H6327XTSA1 to confirm the tape and reel packaging quantity of 1000 pieces per reel. Ensure the component meets the required AEC-Q101 qualification standards if intended for automotive deployment. Cross-reference the datasheet revision date with your manufacturing requirements to ensure compatibility with current production processes.
Single FETs, MOSFETs Selection Notes
Select this component when a P-channel MOSFET with a 60V breakdown voltage and approximately 3A current handling is required. The SIPMOS technology provides a balance of low on-resistance and fast switching speeds. Consider the thermal resistance characteristics and the need for adequate PCB copper area for heat dissipation during continuous operation.
Single FETs, MOSFETs Part Context
This part belongs to the Infineon SIPMOS small-signal transistor family, designed for general-purpose switching applications. The SIPMOS line utilizes planar trench technology to achieve low on-resistance and high reliability. The BSP613P variant specifically targets applications requiring efficient power control within the 60V voltage range.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes must match the P-channel configuration, -60V Vds, and SOT-223 package. Verify that any replacement maintains similar Rds(on) and gate charge specifications to ensure circuit performance parity.
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