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BSP613PL6327HUSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 60V 2.9A SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP613PL6327HUSA1
- Description：MOSFET P-CH 60V 2.9A SOT223-4
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：2.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：130mOhm @ 2.9A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：33 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：875 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP613PL6327HUSA1
Single FETs, MOSFETs Overview
The BSP613PL6327HUSA1 is a P-channel enhancement-mode MOSFET from Infineon's SIPMOS series, housed in a PG-SOT223-4 package. It features a drain-source voltage of -60 V and a continuous drain current of -2.9 A at 25°C. The device has a maximum on-state resistance of 0.13 Ω and supports pulsed currents up to -11.6 A. It includes avalanche energy ratings (EAS: 150 mJ) and high reverse diode dv/dt capability (6 kV/µs). Qualified under AEC-Q101, it operates within a temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Avalanche rated for robust operation under transient conditions
- High reverse diode dv/dt rating suitable for fast switching applications
- Qualified according to AEC-Q101 automotive standards
Single FETs, MOSFETs Applications
- Fast switching buck converters
- Automotive powertrain systems
- General low-side switching applications
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix H6327XTSA1 against official Infineon documentation to confirm tape-and-reel packaging quantities and marking details. Ensure component authenticity through authorized channels and cross-reference datasheet revision Rev.2.7 for accurate electrical parameters.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring a P-channel MOSFET with high dv/dt tolerance and avalanche ruggedness. Consider the thermal resistance characteristics and package limitations when designing for high ambient temperatures or limited cooling areas.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's SIPMOS small-signal transistor family, designed for efficient power switching. The PG-SOT223 package provides a compact surface-mount solution suitable for automated assembly processes in consumer and industrial electronics.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon substitution guides for verified alternatives. Do not assume pin-compatible replacements without verifying electrical parameters and thermal characteristics.
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