BSP716NH6327XTSA1

$0.51

Description：MOSFET N-CH 75V 2.3A SOT223-4
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:d7b9c8559cea Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSP716NH6327XTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 75V 2.3A SOT223-4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSP716NH6327XTSA1

Description：MOSFET N-CH 75V 2.3A SOT223-4
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：75 V
Current - Continuous Drain (Id) @ 25°C：2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：160mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id：1.8V @ 218µA
Gate Charge (Qg) (Max) @ Vgs：13.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：315 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.8W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT223-4
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for BSP716NH6327XTSA1

BSP716NH6327XTSA1

Single FETs, MOSFETs Overview

The BSP716NH6327XTSA1 is an N-channel enhancement mode MOSFET from the OptiMOS™ Small-Signal-Transistor series. It features a maximum drain-source voltage of 75 V and a continuous drain current of 2.3 A at 25 °C. The device has a maximum on-state resistance of 0.18 Ω at VGS=4.5 V and 0.16 Ω at VGS=10 V. It operates within a temperature range of -55 °C to 150 °C, dissipates up to 1.8 W, and is qualified according to AEC-Q101 standards.

Single FETs, MOSFETs Feature Summary

Logic level operation rated for 4.5 V gate drive
Avalanche energy rated capability
Qualified for automotive applications per AEC-Q101

Single FETs, MOSFETs Applications

Automotive power switching circuits
Low-side load switching
General purpose small-signal transistor applications

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by checking the manufacturer's marking code against official datasheet specifications. Confirm package type PG-SOT223 and ordering suffix H6327 match the required reel quantity of 1000 pieces. Ensure compliance with RoHS and halogen-free requirements as stated in the product documentation.

Single FETs, MOSFETs Selection Notes

Select this component when a logic-level N-channel MOSFET with avalanche rating is required. The 75 V breakdown voltage suits low-voltage automotive systems. Verify that the 2.3 A continuous current and 1.8 W power dissipation meet the thermal design constraints for the specific application environment.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS™ Small-Signal-Transistor family. It utilizes silicon technology in a surface-mount SOT-223 package. The device is designed for high efficiency and reliability in compact designs, specifically targeting automotive and industrial control sectors requiring robust switching performance.