Single FETs, MOSFETs BSP89 E6327 product image

BSP89 E6327

  • Description:MOSFET N-CH 240V 350MA SOT223-4
  • Series:SIPMOS®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)

SKU:e8ac03a5dca9 Category: Brand:

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BSP89 E6327 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 240V 350MA SOT223-4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSP89 E6327

  • Description:MOSFET N-CH 240V 350MA SOT223-4
  • Series:SIPMOS®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):240 V
  • Current - Continuous Drain (Id) @ 25°C:350mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:6Ohm @ 350mA, 10V
  • Vgs(th) (Max) @ Id:1.8V @ 108µA
  • Gate Charge (Qg) (Max) @ Vgs:6.4 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:140 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):1.8W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-SOT223-4
  • Package / Case:TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for BSP89 E6327

BSP89 E6327

Single FETs, MOSFETs Overview

The BSP89 E6327 is a discontinued N-channel small signal MOSFET manufactured by Infineon Technologies. It utilizes SIPMOS technology and is housed in a PG-SOT223-4-21 surface-mount package. The device features a maximum drain-source voltage of 240 V and a continuous drain current of 350 mA at 25°C. Key electrical parameters include a gate charge of 6.4 nC at 10 V, an input capacitance of 140 pF at 25 V, and a maximum on-resistance of 6 ohms at 350 mA and 10 V. It operates within a temperature range of -55°C to 150°C junction temperature.

Single FETs, MOSFETs Feature Summary

  • N-channel enhancement mode construction using SIPMOS technology
  • High breakdown voltage capability suitable for small power applications
  • Automotive grade qualification compliant with AEC-Q101 standards

Single FETs, MOSFETs Applications

  • Small signal switching circuits
  • Automotive electronic control modules
  • Low power amplifier stages

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized channels as the BSP89 E6327 is officially obsolete. Confirm that replacement sources provide valid traceability documentation. Ensure the substitute part matches the original pinout and thermal characteristics. Check for any specific handling requirements due to the end-of-life status. Validate that the alternative component meets all necessary automotive reliability standards.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high-voltage small-signal switching in compact packages. The SIPMOS technology offers robust performance for low-power applications. Consider the 240 V rating when designing for higher voltage environments. Evaluate the thermal resistance for heat dissipation needs. Verify compatibility with existing PCB footprints and assembly processes.

Single FETs, MOSFETs Part Context

The BSP89 belongs to Infineon's SIPMOS family of small signal MOSFETs. These devices are designed for general-purpose switching and amplification. The E6327 suffix indicates a specific tape and reel packaging configuration. This series is known for its reliability in automotive and industrial environments.

Single FETs, MOSFETs Replacement Considerations

BSP89,115 from Nexperia USA Inc. is a confirmed public substitute.

BSP89 E6327BSP89 E6327

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