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BSP89L6327HTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 240V 350MA SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP89L6327HTSA1
- Description：MOSFET N-CH 240V 350MA SOT223-4
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：240 V
- Current - Continuous Drain (Id) @ 25°C：350mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6Ohm @ 350mA, 10V
- Vgs(th) (Max) @ Id：1.8V @ 108µA
- Gate Charge (Qg) (Max) @ Vgs：6.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：140 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4-21
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP89L6327HTSA1
Single FETs, MOSFETs Overview
The BSP89L6327HTSA1 is a surface-mount N-channel enhancement mode MOSFET manufactured by Infineon Technologies. It utilizes SIPMOS technology and is housed in a PG-SOT223-4-21 package. The device features a drain-source voltage of 240 V and a continuous drain current of 350 mA at 25°C. Key electrical parameters include a maximum on-resistance of 6 ohms at 10V gate drive, a gate charge of 6.4 nC at 10V, and an input capacitance of 140 pF at 25V. It operates within a junction temperature range of -55°C to 150°C and holds AEC-Q101 automotive qualification.
Single FETs, MOSFETs Feature Summary
- Automotive-grade reliability certified under AEC-Q101 standards
- High-voltage capability with 240V drain-source breakdown
- Logic-level compatible gate drive requirements for efficient switching
- Robust thermal performance suitable for compact surface-mount designs
Single FETs, MOSFETs Applications
- Automotive power management circuits
- General-purpose high-voltage switching applications
- Load switching in automotive electronics
Single FETs, MOSFETs Procurement Notes
Verify component authenticity through authorized distributors as the part status is obsolete. Confirm availability of qualified substitutes such as BSP89 from Nexperia. Ensure replacement components meet identical pinout, voltage ratings, and automotive qualification standards to maintain system integrity.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high-voltage isolation in small packages. Consider the 6-ohm on-resistance when calculating power dissipation at 350mA load. Verify that the driving circuit can provide sufficient gate voltage to minimize resistance. Check lead time constraints due to end-of-life status.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's SIPMOS family of single N-channel MOSFETs. It is designed for robust performance in automotive environments. The L6327 suffix indicates specific tape-and-reel packaging configuration. The base model BSP89 represents the core semiconductor structure.
Single FETs, MOSFETs Replacement Considerations
Public confirmed substitute: BSP89,115 (Nexperia USA Inc.). Verify pin compatibility and electrical specifications match original requirements before integration.
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