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BSR202NL6327HTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 20V 3.8A SC59. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSR202NL6327HTSA1
- Description：MOSFET N-CH 20V 3.8A SC59
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：3.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：21mOhm @ 3.8A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs：8.8 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：1147 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SC59-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for BSR202NL6327HTSA1
Single FETs, MOSFETs Overview
The BSR202NL6327HTSA1 is an N-channel OptiMOS®2 small-signal transistor in a PG-SC-59 (SOT-23) package. It features a 20 V drain-source breakdown voltage and supports continuous drain currents up to 3.8 A at 25 °C, with pulsed capability reaching 15.2 A. The device exhibits low on-state resistance of 17 mΩ at VGS=4.5 V and 33 mΩ at VGS=2.5 V. Rated for super logic level operation, it includes avalanche and dv/dt ratings. Operating temperatures range from -55 °C to +150 °C, and the component is qualified according to AEC-Q101 standards.
Single FETs, MOSFETs Feature Summary
- Optimized for super logic level applications with enhanced gate threshold characteristics
- Capable of handling avalanche energy and high reverse diode dv/dt switching rates
- Designed with Pb-free lead plating and RoHS compliance for environmental safety
Single FETs, MOSFETs Applications
- Low-side switching in automotive electronic control units
- Power management circuits requiring fast switching speeds
- General-purpose signal switching in consumer electronics
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix L6327 against official Infineon documentation to confirm tape and reel specifications. Confirm that the component meets current AEC-Q101 qualification requirements for your target application environment. Ensure compatibility with standard SOT-23 footprints during PCB layout validation.
Single FETs, MOSFETs Selection Notes
Select this component when a single N-channel MOSFET with low on-resistance and high current capacity is required in a compact surface-mount package. Consider its avalanche rating for inductive load switching applications. Evaluate thermal performance based on the specified junction-to-ambient thermal resistance under minimal footprint conditions.
Single FETs, MOSFETs Part Context
This part belongs to the BSR202N series of OptiMOS®2 transistors manufactured by Infineon Technologies. It utilizes silicon technology within the PG-SC-59 package form factor. The series is designed for general-purpose switching applications where low conduction losses and robust switching performance are critical design parameters.
Single FETs, MOSFETs Replacement Considerations
BSR202N
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