Single FETs, MOSFETs BSR316PH6327XTSA1 product image

BSR316PH6327XTSA1

$0.47
  • Description:MOSFET P-CH 100V 360MA SC59
  • Series:SIPMOS®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

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BSR316PH6327XTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 100V 360MA SC59. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSR316PH6327XTSA1

  • Description:MOSFET P-CH 100V 360MA SC59
  • Series:SIPMOS®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:360mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:1.8Ohm @ 360mA, 10V
  • Vgs(th) (Max) @ Id:1V @ 170µA
  • Gate Charge (Qg) (Max) @ Vgs:7 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:165 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):500mW (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-SC59-3
  • Package / Case:TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for BSR316PH6327XTSA1

BSR316PH6327XTSA1

Single FETs, MOSFETs Overview

The BSR316PH6327XTSA1 is a small signal P-channel MOSFET manufactured by Infineon Technologies. It utilizes silicon technology and features an enhancement mode channel configuration within a compact SC-59-3 surface-mount package. Key electrical parameters include a drain-source breakdown voltage of 100 V, a continuous drain current of 360 mA, and a maximum gate-source voltage of 20 V. The device exhibits a typical on-resistance of 1.8 ohms and a gate charge of 5.3 nC. It supports a power dissipation of 500 mW and operates reliably across a temperature range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

  • Single-channel P-channel enhancement mode operation for efficient switching control
  • High voltage tolerance with 100 V drain-source breakdown capability
  • Compact SC-59-3 surface-mount packaging for space-constrained designs

Single FETs, MOSFETs Applications

  • Small signal switching applications requiring high voltage isolation
  • Low current load management in consumer electronics
  • General purpose amplification circuits utilizing P-channel topology

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including the suffix XTSA1 to ensure correct tape and reel packaging specifications. Confirm that the SC-59-3 footprint matches your PCB layout requirements. Check official Infineon documentation for the most recent RoHS compliance status and lifecycle information before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when a P-channel MOSFET with 100 V rating and moderate current handling is required. The 1.8 ohm on-resistance suits low-power switching tasks where efficiency at higher currents is less critical than voltage withstand capability. Ensure the thermal design accommodates the 500 mW power dissipation limit in the intended operating environment.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's small signal MOSFET portfolio, designed for general-purpose electronic applications. The BSR316 series offers a balance of voltage rating and current capacity suitable for various consumer and industrial control circuits. The specific XTSA1 suffix indicates the standard commercial-grade packaging format provided by the manufacturer.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon substitution guides for verified alternatives. Cross-reference pinouts and electrical characteristics carefully when considering generic equivalents to ensure compatibility with existing circuit designs.

BSR316PH6327XTSA1BSR316PH6327XTSA1
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