ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
BSR92PL6327HTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 250V 140MA SC59. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSR92PL6327HTSA1
- Description：MOSFET P-CH 250V 140MA SC59
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：250 V
- Current - Continuous Drain (Id) @ 25°C：140mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.8V, 10V
- Rds On (Max) @ Id, Vgs：11Ohm @ 140mA, 10V
- Vgs(th) (Max) @ Id：1V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs：4.8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：109 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SC59-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for BSR92PL6327HTSA1
Single FETs, MOSFETs Overview
The BSR92PL6327HTSA1 is a Gallium Nitride (GaN) field-effect transistor manufactured by Infineon Technologies. It features a P-Channel configuration housed in an SOT-23-3 surface-mount package. The device supports a drain-source breakdown voltage of 250 V and a continuous drain current of 140 mA. Key electrical characteristics include an on-resistance of 8 Ohms, a gate-source voltage range of -20 V to +20 V, and a threshold voltage of 2 V. It operates within a temperature range of -55°C to +150°C with a power dissipation rating of 500 mW.
Single FETs, MOSFETs Feature Summary
- Utilizes Gallium Nitride technology for enhanced performance
- Features a high-voltage P-Channel configuration
- Designed for surface-mount integration via SOT-23-3 packaging
Single FETs, MOSFETs Applications
- High-voltage switching circuits
- Power management systems requiring P-channel control
- Automotive electronic applications
Single FETs, MOSFETs Procurement Notes
Verify component authenticity through official Infineon channels or authorized distributors. Confirm the specific suffix matches the requested variant. Check current lifecycle status as end-of-life products may have limited availability. Ensure storage conditions comply with moisture sensitivity levels. Validate that the sourcing partner provides traceable documentation for quality assurance purposes.
Single FETs, MOSFETs Selection Notes
Select this component when a high-voltage P-channel GaN switch is required in a compact form factor. Consider the 250 V rating for appropriate voltage headroom. Evaluate the 8 Ohm on-resistance against thermal constraints. Compare the SOT-23-3 footprint against available PCB space. Assess the operating temperature range against environmental requirements.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's portfolio of discrete semiconductor devices. It represents the company's focus on advanced materials like GaN for power applications. The SOT-23-3 package allows for dense circuit board layouts. It serves as a specialized solution for high-voltage switching needs in modern electronics.
Single FETs, MOSFETs Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided data. Verify pin compatibility and electrical specifications before considering alternative manufacturers. Consult official replacement guides for discontinued items.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
