BSS110

$0.09

Description：MOSFET P-CH 50V 170MA TO92-3
Series：-
Mfr：onsemi
Package：Bulk

SKU:bfdde995c7e5 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

BSS110 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET P-CH 50V 170MA TO92-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSS110

Description：MOSFET P-CH 50V 170MA TO92-3
Series：-
Mfr：onsemi
Package：Bulk
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：10Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：40 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-92-3
Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Single FETs, MOSFETs datasheet and documents for BSS110

BSS110

Single FETs, MOSFETs Overview

The BSS110 is a P-Channel Enhancement Mode Field Effect Transistor manufactured by onsemi. It features a Drain-Source Voltage (VDSS) of -50 V and a continuous Drain Current (ID) of -0.17 A at TA = 35°C. The device has a maximum power dissipation of 0.63 W and operates within a temperature range of -55 to 150 °C. Static Drain-Source On-Resistance (RDS(ON)) is specified as 10 Ω max at VGS = -10 V and ID = -0.17 A. Gate Threshold Voltage (VGS(th)) ranges from -0.8 to -2 V.

Single FETs, MOSFETs Feature Summary

High density cell design for low RDS(ON)
High saturation current capability
Voltage controlled p-channel small signal switch

Single FETs, MOSFETs Applications

Low voltage high side switching
General purpose switching applications requiring up to 0.17A DC

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer origin, as the datasheet indicates Fairchild Semiconductor production prior to onsemi acquisition. Confirm the package type matches TO-236AB or equivalent TO-92 variants. Ensure compliance with RoHS directives if required for the specific application environment.

Single FETs, MOSFETs Selection Notes

Select this component for low current P-channel switching tasks where a -50V rating is sufficient. Compare against the BSS84 variant if lower continuous current (-0.13A) is acceptable. Consider thermal resistance characteristics for heat dissipation in enclosed designs.

Single FETs, MOSFETs Part Context

This part belongs to the P-Channel Enhancement Mode Field Effect Transistor family produced using DMOS technology. It is designed to minimize on-state resistance while providing rugged performance. The product line includes similar devices like the BSS84 for varied current requirements.