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BSS119 E7978 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 170MA SOT23-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSS119 E7978
- Description：MOSFET N-CH 100V 170MA SOT23-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6Ohm @ 170mA, 10V
- Vgs(th) (Max) @ Id：2.3V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs：2.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：78 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for BSS119 E7978
Single FETs, MOSFETs Overview
The Infineon BSS119 is a SIPMOS N-channel enhancement mode logic-level small-signal transistor housed in a PG-SOT23 package. It features a maximum drain-source voltage of 100 V and a continuous drain current of 0.17 A at 25 °C, with a pulsed drain current capability of 0.68 A. The device exhibits a typical on-state resistance of 4.9 Ω at VGS=4.5V and 3.4 Ω at VGS=10V. Operating within a temperature range of -55 °C to +150 °C, it includes an integrated reverse diode rated for 0.17 A continuous forward current.
Single FETs, MOSFETs Feature Summary
- Logic-level gate threshold enabling direct drive from standard digital logic interfaces
- High dv/dt rating for the reverse diode to support fast switching applications
- Enhancement mode operation providing reliable low-power signal control
Single FETs, MOSFETs Applications
- Low-side switching in battery-powered portable devices
- Signal routing and level shifting circuits
- Small-signal amplification stages
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix E7978 against official Infineon documentation to confirm tape and reel specifications. Ensure the component meets the required industrial or commercial temperature ratings. Cross-reference the datasheet revision to validate electrical parameters before integration into final designs.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring compact SMD packaging and low-voltage logic compatibility. Evaluate thermal constraints carefully as power dissipation decreases significantly above ambient temperatures. Consider the relatively high on-resistance when designing for minimal voltage drop across the switch.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's SIPMOS family of small-signal transistors designed for general-purpose switching and amplification. The PG-SOT23 package provides a space-efficient solution for consumer electronics and portable equipment where board real estate is limited.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon cross-reference lists for verified substitutes. Do not assume pin-compatible alternatives without verifying electrical characteristics and package dimensions.
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