Single FETs, MOSFETs BSS119L6327HTSA1 product image

BSS119L6327HTSA1

$0.12
  • Description:MOSFET N-CH 100V 170MA SOT23-3
  • Series:SIPMOS®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)

SKU:ed66716bc627 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

BSS119L6327HTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 170MA SOT23-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSS119L6327HTSA1

  • Description:MOSFET N-CH 100V 170MA SOT23-3
  • Series:SIPMOS®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:6Ohm @ 170mA, 10V
  • Vgs(th) (Max) @ Id:2.3V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs:2.5 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:78 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):360mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-SOT23
  • Package / Case:TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for BSS119L6327HTSA1

BSS119L6327HTSA1

Single FETs, MOSFETs Overview

The BSS119L6327HTSA1 is an N-channel enhancement mode logic level MOSFET from the Infineon SIPMOS family. It features a 100 V drain-source breakdown voltage and a continuous drain current of 0.17 A at 25 °C. The device offers a maximum on-state resistance of 6 Ω at 10 V gate drive. It operates within a junction temperature range of -55 °C to +150 °C and utilizes a PG-SOT23 surface-mount package.

Single FETs, MOSFETs Feature Summary

  • Logic Level Gate Drive
  • dv/dt Rated Capability
  • SIPMOS Technology

Single FETs, MOSFETs Applications

  • Small-signal switching applications
  • Low-power load switching
  • General-purpose transistor circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix L6327 corresponds to the required tape and reel packaging configuration. Confirm that the component meets all necessary automotive or industrial qualification standards if applicable to the target design environment before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low-voltage logic interface compatibility with standard microcontroller outputs. Ensure the thermal management strategy accommodates the specified power dissipation limits under expected ambient operating conditions and duty cycles.

Single FETs, MOSFETs Part Context

This part belongs to the BSS119 series, which represents small-signal transistors utilizing Infineon's SIPMOS technology. The series is designed for compact designs offering high-frequency switching capabilities and robust performance in space-constrained electronic systems.

Single FETs, MOSFETs Replacement Considerations

BSS119H6327XTSA1

BSS119L6327HTSA1BSS119L6327HTSA1
$0.12
Buy Now